TT Electronics MOSFET DMD1028

The DMD1028 is a silicon DMOS RF FET designed for push-pull VHF/UHF communication applications up to 400 MHz. It features a non-BeO, gold-metallized package with dimensions of 15.24 mm × 10.80 mm × 27.94 mm and mountings for drain, gate, and source pins on both sides. The device supports a maximum drain-source breakdown voltage of 70 V, gate-source voltage of ±20 V, and continuous drain current of 30 A per side. It offers a minimum power gain of 16 dB, drain efficiency of 60% at 28 V and 2 A quiescent current, and thermal resistance from junction to case of 0.2°C/W. The part is RoHS compliant and rated for operation up to a 200°C junction temperature. It exhibits ultra-low thermal resistance and low Crss, suitable for broadband RF power amplification.