Microchip Technology, Inc. Silicon Carbide MOSFETs MSC017SMA120B4

Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
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Description
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFETs
MSC017SMA120B4
Silicon Carbide MOSFETs MSC017SMA120B4
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant Benefits High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership Applications PV inverter, converter and industrial motor drives Smart grid transmission and distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant

Benefits

  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership

Applications

  • PV inverter, converter and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Supplier's Site Datasheet
Single FETs, MOSFETs - 150-MSC017SMA120B4-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
150-MSC017SMA120B4-ND
Single FETs, MOSFETs 150-MSC017SMA120B4-ND
Mosfet Array

Mosfet Array

Buy Now Datasheet
Singapore, Singapore
1200V 17 MOHM MOSFET Transistor
278-MSC017SMA120B4
1200V 17 MOHM MOSFET Transistor 278-MSC017SMA120B4
MOSFET SIC 1200V 17 MOHM TO-247 Product overview: MSC017SMA120B4 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 17 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 17 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC017SMA120B4 can be used for catalog matching and distributor lookup.

MOSFET SIC 1200V 17 MOHM TO-247 Product overview: MSC017SMA120B4 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 17 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 17 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MSC017SMA120B4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSC017SMA120B4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSC017SMA120B4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSC017SMA120B4
MOSFET SIC 1200V 17 MOHM TO-247

MOSFET SIC 1200V 17 MOHM TO-247

Supplier's Site
Single FETs, MOSFETs - MSC017SMA120B4 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MSC017SMA120B4
Single FETs, MOSFETs MSC017SMA120B4
MOSFET SIC 1200V 17 MOHM TO-247

MOSFET SIC 1200V 17 MOHM TO-247

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC017SMA120B4 150-MSC017SMA120B4-ND 278-MSC017SMA120B4 MSC017SMA120B4 MSC017SMA120B4
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs 1200V 17 MOHM MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
rDS(on) 0.0176 ohms
Package Type TO-247; TO-247-4L TO-247; TO-247-4 Bulk TO-247; TO-247-4 TO-247; TO-247-4
Polarity N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
PD 455 milliwatts 455000 milliwatts
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