Microchip Technology, Inc. Power IGBT Transistor MSCGLQ25X120CRTBL3NG

Description
The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses SiC Schottky diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Ultra low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS Compliant Applications High reliability drive Medium and heavy drones Aircraft actuation systems
Request a Quote Datasheet
Description
The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses SiC Schottky diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Ultra low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS Compliant Applications High reliability drive Medium and heavy drones Aircraft actuation systems
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - MSCGLQ25X120CRTBL3NG - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
MSCGLQ25X120CRTBL3NG
Power IGBT Transistor MSCGLQ25X120CRTBL3NG
The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses SiC Schottky diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Ultra low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS Compliant Applications High reliability drive Medium and heavy drones Aircraft actuation systems

The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module.

Features

  • High-Speed IGBT 4
    • Low voltage drop
    • Low leakage current
    • Low switching losses
  • SiC Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Ultra low weight and profile
  • Kelvin source for easy drive
  • Si3N4 substrate with thick copper for improved thermal performance
  • Internal thermistor for temperature monitoring
  • Extended temperature range

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very integrated power conversion system
  • Low profile
  • RoHS Compliant

Applications

  • High reliability drive
  • Medium and heavy drones
  • Aircraft actuation systems
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MSCGLQ25X120CRTBL3NG
Product Name Power IGBT Transistor
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