The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module.
Features
High-Speed IGBT 4
Low voltage drop
Low leakage current
Low switching losses
SiC Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
Ultra low weight and profile
Kelvin source for easy drive
Si3N4 substrate with thick copper for improved thermal performance
Internal thermistor for temperature monitoring
Extended temperature range
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Very integrated power conversion system
Low profile
RoHS Compliant
Applications
High reliability drive
Medium and heavy drones
Aircraft actuation systems
The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module.
Features
- High-Speed IGBT 4
- Low voltage drop
- Low leakage current
- Low switching losses
- SiC Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
- Very low stray inductance
- Ultra low weight and profile
- Kelvin source for easy drive
- Si3N4 substrate with thick copper for improved thermal performance
- Internal thermistor for temperature monitoring
- Extended temperature range
Benefits
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Solderable terminals both for power and signal for easy PCB mounting
- Very integrated power conversion system
- Low profile
- RoHS Compliant
Applications
- High reliability drive
- Medium and heavy drones
- Aircraft actuation systems