Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobili
ty-transistor (HEMT) with ultra-low on resistance.
Features
GaN-on-Silicon E-mode HEMT technology
Dual Channels, Common Source
Ultra High Switching Frequency
Fast and Controllable Fall and Rise Time
Ultra-low on Resistance
Applications
Point of Load Converters
Class-D audio
Lidar Application
Envelope Tracking Power Supplies
Pulsed Power Applications
Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) with ultra-low on resistance.
Features
- GaN-on-Silicon E-mode HEMT technology
- Dual Channels, Common Source
- Ultra High Switching Frequency
- Fast and Controllable Fall and Rise Time
- Ultra-low on Resistance
Applications
- Point of Load Converters
- Class-D audio
- Lidar Application
- Envelope Tracking Power Supplies
- Pulsed Power Applications
