Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120AM042CT6LIAG

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converters Outstanding performance at high frequency operation Low profile Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) EV motor and traction drive Welding converters Switched mode power supplies
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120AM042CT6LIAG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converters Outstanding performance at high frequency operation Low profile Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) EV motor and traction drive Welding converters Switched mode power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120AM042CT6LIAG
Silicon Carbide MOSFET Modules MSCSM120AM042CT6LIAG
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converters Outstanding performance at high frequency operation Low profile Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) EV motor and traction drive Welding converters Switched mode power supplies

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • M4 and M5 power connectors
  • M2.5 signals connectors
  • Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

  • High efficiency converters
  • Outstanding performance at high frequency operation
  • Low profile
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS compliant

Applications

  • Uninterruptible Power Supply (UPS)
  • EV motor and traction drive
  • Welding converters
  • Switched mode power supplies
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120AM042CT6LIAG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120AM042CT6LIAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120AM042CT6LIAG
SIC 2N-CH 1200V 495A SP6C LI

SIC 2N-CH 1200V 495A SP6C LI

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120AM042CT6LIAG MSCSM120AM042CT6LIAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6LI
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