Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 640A (Tc) Chassis Mount Module
1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module
Technical Features
Applications
System Benefits
SIC 2N-CH 1200V 640A MODULE
1.2 KV, 480A HIGH PERFORMANCE SI
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1697-CAS480M12HM3-ND | CAS480M12HM3 | CAS480M12HM3 | CAS480M12HM3 |
| Product Name | FET, MOSFET Arrays | Silicon Carbide MOSFET Modules | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Package Type | Module | 110 x 65 mm | Module | |
| Packing Method | Box | |||
| Polarity | N-Channel; 2 N-Channel (Half Bridge) | |||
| Transistor Technology / Material | Silicon Carbide (SiC) |
