1.2 KV, 480A HIGH PERFORMANCE SI
1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module
Technical Features
Applications
System Benefits
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 640A (Tc) Chassis Mount Module
SIC 2N-CH 1200V 640A MODULE
| ODG (Origin Data Global) | Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | CAS480M12HM3 | CAS480M12HM3 | 1697-CAS480M12HM3-ND | CAS480M12HM3 |
| Product Name | FET, MOSFET Arrays | Silicon Carbide MOSFET Modules | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Half Bridge) | |||
| Transistor Technology / Material | Silicon Carbide (SiC) | |||
| V(BR)DSS | 1200 volts | |||
| IDSS | 640000 milliamps |
