Wolfspeed 650V MOSFET Transistor C3M0025065K

GEN 3 650V 25 M SIC MOSFET Product overview: C3M0025065K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0025065K can be used for catalog matching and distributor lookup.

Wolfspeed extends its leadership in 650V SiC technology by introducing new 25 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M^TM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

Features

• 3rd Generation (C3M^TM) SiC MOSFET Technology
• Superior overall system level efficiency
• High frequency operation
• Robust body diode with low reverse recovery charge
• Kelvin Source connection to reduce parasitic inductance and switching losses
• Industry standard packages that meet creepage and clearance requirements

Figures of Merit

• Low on-state resistance over temperature
• Low parasitic capacitances
• Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
• Wide range of operation junction temperature

Target Applications

• Server Power Supplies
• EV Charging Systems
• Energy Storage Systems (UPS)
• Solar (PV) Inverters

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325248-C3M0025065K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Power Dissipation (Max): 326W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 72
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0025065K,1697-C3M0025065K
Base Product Number: C3M0025065
Drive Voltage (Max Rds On, Min Rds On): 15V

N-Channel 650V 97A (Tc) 326W (Tc) Through Hole TO-247-4L

GEN 3 650V 25 M SIC MOSFET