Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
N-Channel 600V 43A (Tc) 565W (Tc) Chassis Mount ISOTOP®
Win Source Part Number: 1001699-APL602J
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 565W (Tc)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APL602
Drive Voltage (Max Rds On, Min Rds On): 12V
MOSFET N-CH 600V 43A ISOTOP
| Richardson RFPD | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | APL602J | APL602J-ND | 1001699-APL602J | APL602J |
| Product Name | Power MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.1250 ohms | |||
| Package Type | SOT-227 | SOT-227-4, miniBLOC | SOT3 | SOT-227-4, miniBLOC |
| Polarity | N-Channel | N-Channel |
