The C3M0075120K is a 1200V N-channel enhancement mode silicon carbide MOSFET in a TO-247-4 package, designed for high-efficiency power conversion in applications such as EV battery chargers, renewable energy systems, and high-voltage DC/DC converters. It features a separate driver source pin, 8mm creepage distance between drain and source, and a maximum junction temperature of 150°C. The device has a typical drain-source on-resistance of 75 mΩ at 25°C and 100 mΩ at 150°C, with a continuous drain current of 21A at 100°C case temperature and 114W maximum power dissipation. It meets RoHS compliance and has a thermal resistance from junction to case of 1.1°C/W. Switching performance is optimized with low gate charge and fast intrinsic diode reverse recovery.
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Features
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Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324541-C3M0075120K
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 113.6W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: C3M0075120K-ND,1697-
Base Product Number: C3M0075120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant
SICFET N-CH 1200V 30A TO247-4L Product overview: C3M0075120K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0075120K can be used for catalog matching and distributor lookup.
N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-4L
MOSFET SIC MOSFET 1200V 75 mOhm
SICFET N-CH 1200V 30A TO247-4L
SICFET N-CH 1200V 30A TO247-4L
MOSFET, N-CH, 1.2KV, 30.8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30.8A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| Wolfspeed | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0075120K | 1923519 | 1324541-C3M0075120K | 278-C3M0075120K | 1697-C3M0075120K-ND | C3M0075120K | C3M0075120K | C3M0075120K | 12AC0677 |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 1200V 30A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 30.8A, To-247; Transistor Polarity Wolfspeed |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-247-4 | TO-247; To-247 | TO-247; SOT3; TO-247-4 | Tube | TO-247; TO-247-4 | TO-247; TO-247-4 | TO-247; TO-247-4 | TO-3; TO-247 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| Number of units in IC | 1 |
