Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0075120K

Description
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Features Minimum of 1200V Vbr across entire operating temperature range New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Download our LTspice Models
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0075120K - Wolfspeed
    Wolfspeed
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324541-C3M0075120K - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 1923519 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1923375 - RS Components, Ltd.
    RS Components, Ltd.
  • Silicon Carbide MOSFETs - C3M0075120K - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - C3M0075120K - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1697-C3M0075120K-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0075120K - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 1.2Kv, 30.8A, To-247; Transistor Polarity Wolfspeed - 12AC0677 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Features Minimum of 1200V Vbr across entire operating temperature range New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Download our LTspice Models
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0075120K - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0075120K
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0075120K
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Features Minimum of 1200V Vbr across entire operating temperature range New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Download our LTspice Models

Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.

Features

  • Minimum of 1200V Vbr across entire operating temperature range
  • New low-impedance package with driver source
  • > 8mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Download our LTspice Models

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324541-C3M0075120K - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324541-C3M0075120K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324541-C3M0075120K
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324541-C3M0075120K Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 113.6W (Tc) Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V Vgs (Max): +19V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-4 ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: C3M0075120K-ND,1697- C3M0075120K,-3312-C3 M0075120K Base Product Number: C3M0075120 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324541-C3M0075120K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 113.6W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: C3M0075120K-ND,1697-C3M0075120K,-3312-C3M0075120K
Base Product Number: C3M0075120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

Buy Now Datasheet
MOSFETs - 1923519 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923519
MOSFETs 1923519
MOSFET SIC MOSFET 1200V 75 mOhm

MOSFET SIC MOSFET 1200V 75 mOhm

Supplier's Site
MOSFETs - 1923375 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923375
MOSFETs 1923375
MOSFET SIC MOSFET 1200V 75 mOhm

MOSFET SIC MOSFET 1200V 75 mOhm

Supplier's Site
Silicon Carbide MOSFETs - C3M0075120K - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0075120K
Silicon Carbide MOSFETs C3M0075120K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • C3MTM SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0075120K - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0075120K
Single FETs, MOSFETs C3M0075120K
SICFET N-CH 1200V 30A TO247-4L

SICFET N-CH 1200V 30A TO247-4L

Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0075120K-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0075120K-ND
Single FETs, MOSFETs 1697-C3M0075120K-ND
N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-4L

N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0075120K - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0075120K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0075120K
SICFET N-CH 1200V 30A TO247-4L

SICFET N-CH 1200V 30A TO247-4L

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0075120K
MOSFET C3M0075120K
MOSFET SIC MOSFET 1200V 75 mOhm

MOSFET SIC MOSFET 1200V 75 mOhm

Buy Now Datasheet
Mosfet, N-Ch, 1.2Kv, 30.8A, To-247; Transistor Polarity Wolfspeed - 12AC0677 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 30.8A, To-247; Transistor Polarity Wolfspeed
12AC0677
Mosfet, N-Ch, 1.2Kv, 30.8A, To-247; Transistor Polarity Wolfspeed 12AC0677
MOSFET, N-CH, 1.2KV, 30.8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30.8A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 30.8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30.8A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed Win Source Electronics RS Components, Ltd. Richardson RFPD ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0075120K 1324541-C3M0075120K 1923519 C3M0075120K C3M0075120K 1697-C3M0075120K-ND C3M0075120K C3M0075120K 12AC0677
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs Silicon Carbide MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 1.2Kv, 30.8A, To-247; Transistor Polarity Wolfspeed
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode SiCFET (Silicon Carbide) Silicon Carbide
Package Type TO-247-4 TO-247; SOT3; TO-247-4 TO-247; To-247 TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4 TO-3; TO-247
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
Number of units in IC 1
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