Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0030090K

Description
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing with wide creepage and clearance distance between drain and source (~8mm). The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3M planar MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Features Minimum of 900V Vbr across entire operating temperature range New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0030090K - Wolfspeed
    Wolfspeed
  • Single FETs, MOSFETs - C3M0030090K - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Silicon Carbide MOSFETs - C3M0030090K - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325242-C3M0030090K - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 1697-C3M0030090K-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 900V, 63A, To-247-4; Mosfet Module Configuration Wolfspeed - 50AC5032 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0030090K - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing with wide creepage and clearance distance between drain and source (~8mm). The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3M planar MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Features Minimum of 900V Vbr across entire operating temperature range New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0030090K - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0030090K
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0030090K
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing with wide creepage and clearance distance between drain and source (~8mm). The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3M planar MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Features Minimum of 900V Vbr across entire operating temperature range New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing with wide creepage and clearance distance between drain and source (~8mm). The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3M planar MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. See our complete list of reference designs for examples of popular topologies commonly used with SiC today.

Features

  • Minimum of 900V Vbr across entire operating temperature range
  • New low-impedance package with driver source
  • > 8mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0030090K - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0030090K
Single FETs, MOSFETs C3M0030090K
SICFET N-CH 900V 73A TO247-4

SICFET N-CH 900V 73A TO247-4

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0030090K - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0030090K
Silicon Carbide MOSFETs C3M0030090K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Solar Inverters EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • New C3M SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Solar Inverters
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
900V 73A MOSFET Transistor
278-C3M0030090K
900V 73A MOSFET Transistor 278-C3M0030090K
SICFET N-CH 900V 73A TO247-4 Product overview: C3M0030090K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 73A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 73A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0030090K can be used for catalog matching and distributor lookup.

SICFET N-CH 900V 73A TO247-4 Product overview: C3M0030090K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 73A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 73A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0030090K can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325242-C3M0030090K - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325242-C3M0030090K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325242-C3M0030090K
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325242-C3M0030090K Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V Vgs(th) (Max) @ Id: 3.5V @ 11mA Power Dissipation (Max): 240W (Tc) Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-247-4 ECCN: EAR99 Fake Threat In the Open Market: 81 HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0030090K,C3 M0030090K-ND,1697-C3 M0030090K Base Product Number: C3M0030090 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): Not Applicable

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325242-C3M0030090K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 11mA
Power Dissipation (Max): 240W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 81
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0030090K,C3M0030090K-ND,1697-C3M0030090K
Base Product Number: C3M0030090
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): Not Applicable

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0030090K-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0030090K-ND
Single FETs, MOSFETs 1697-C3M0030090K-ND
N-Channel 900V 63A (Tc) 149W (Tc) Through Hole TO-247-4L

N-Channel 900V 63A (Tc) 149W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Mosfet, N-Ch, 900V, 63A, To-247-4; Mosfet Module Configuration Wolfspeed - 50AC5032 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 63A, To-247-4; Mosfet Module Configuration Wolfspeed
50AC5032
Mosfet, N-Ch, 900V, 63A, To-247-4; Mosfet Module Configuration Wolfspeed 50AC5032
MOSFET, N-CH, 900V, 63A, TO-247-4; MOSFET Module Configuration:Single ; Continuous Drain Current Id:63A; Drain Source Voltage Vds:900V; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes

MOSFET, N-CH, 900V, 63A, TO-247-4; MOSFET Module Configuration:Single; Continuous Drain Current Id:63A; Drain Source Voltage Vds:900V; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0030090K - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0030090K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0030090K
SICFET N-CH 900V 73A TO247-4

SICFET N-CH 900V 73A TO247-4

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0030090K
MOSFET C3M0030090K
MOSFET G3 SiC MOSFET 900V, 30mOhm

MOSFET G3 SiC MOSFET 900V, 30mOhm

Buy Now Datasheet

Technical Specifications

  Wolfspeed ODG (Origin Data Global) Richardson RFPD ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0030090K C3M0030090K C3M0030090K 278-C3M0030090K 1325242-C3M0030090K 1697-C3M0030090K-ND 50AC5032 C3M0030090K C3M0030090K
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Single FETs, MOSFETs Silicon Carbide MOSFETs 900V 73A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, N-Ch, 900V, 63A, To-247-4; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode SiCFET (Silicon Carbide) Silicon Carbide
Package Type TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4 Tube TO-247; SOT3; TO-247-4 TO-247; TO-247-4 TO-3; TO-247 TO-247; TO-247-4
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 900 volts 900 volts
IDSS 73000 milliamps 63000 milliamps
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