Wolfspeed Silicon Carbide MOSFET Modules CAB760M12HM3R

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement. Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third Generation SiC MOSFET Technology Light Weight AlSiC Baseplate High Reliability Silicon Nitride Insulator System Benefits Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC High Reliability Material Selection Applications Railway and Traction Solar EV Chargers Industrial Automation and Testing

MOSFET 2N-CH 1200V 1.015KA MODUL