Wolfspeed Silicon Carbide MOSFET Modules CAB760M12HM3R

Description
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement. Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third Generation SiC MOSFET Technology Light Weight AlSiC Baseplate High Reliability Silicon Nitride Insulator System Benefits Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC High Reliability Material Selection Applications Railway and Traction Solar EV Chargers Industrial Automation and Testing
Request a Quote Datasheet
Description
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement. Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third Generation SiC MOSFET Technology Light Weight AlSiC Baseplate High Reliability Silicon Nitride Insulator System Benefits Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC High Reliability Material Selection Applications Railway and Traction Solar EV Chargers Industrial Automation and Testing
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB760M12HM3R - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB760M12HM3R
Silicon Carbide MOSFET Modules CAB760M12HM3R
1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement. Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third Generation SiC MOSFET Technology Light Weight AlSiC Baseplate High Reliability Silicon Nitride Insulator System Benefits Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC High Reliability Material Selection Applications Railway and Traction Solar EV Chargers Industrial Automation and Testing

1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module

Same electrical performance as the CAB760M12HM3. The R in CAB760M12HM3R designates that the pins are on the right-hand side of the module. This helps in power layout for applications needing parallel modules, in that trace lengths can be reduce due to pin placement.

Technical Features

  • Low Inductance, Low Profile 62mm Footprint
  • High Junction Temperature (175 C) Operation
  • Implements Switching Optimized Third Generation SiC MOSFET Technology
  • Light Weight AlSiC Baseplate
  • High Reliability Silicon Nitride Insulator

System Benefits

  • Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • High Reliability Material Selection

Applications

  • Railway and Traction
  • Solar
  • EV Chargers
  • Industrial Automation and Testing
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CAB760M12HM3R-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB760M12HM3R-ND
FET, MOSFET Arrays 1697-CAB760M12HM3R-ND
MOSFET 2N-CH 1200V 1.015KA MODUL

MOSFET 2N-CH 1200V 1.015KA MODUL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB760M12HM3R - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAB760M12HM3R
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAB760M12HM3R
SIC 2N-CH 1200V 1.015KA MODUL

SIC 2N-CH 1200V 1.015KA MODUL

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number CAB760M12HM3R 1697-CAB760M12HM3R-ND CAB760M12HM3R
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 110 x 65 mm Module
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