Wolfspeed 2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET C2M0280120D

Description
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Avalanche ruggedness
  • 2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET - C2M0280120D - Wolfspeed
    Wolfspeed
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1050763-C2M0280120D - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - C2M0280120D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - C2M0280120D-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFETs - C2M0280120D - Richardson RFPD
    Richardson RFPD
  • MOSFET N-CH 1200V 10A TO-247-3 - 163-C2M0280120D - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N-Ch, 1.2Kv, 10A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6013 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0280120D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 108841826 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Avalanche ruggedness
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET - C2M0280120D - Wolfspeed
Wolfspeed
Durham, NC, United States
2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET
C2M0280120D
2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET C2M0280120D
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Avalanche ruggedness

Features

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Resistant to latch-up
  • Easy to parallel and simple to drive
  • Avalanche ruggedness
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1050763-C2M0280120D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1050763-C2M0280120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1050763-C2M0280120D
Win Source Part Number: 1050763-C2M0280120D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Z-FET™ Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ) Power Dissipation (Max): 62.5W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 259 pF @ 1000 V Vgs (Max): +25V, -10V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW12N120K5; STW12NK90Z; STW13NK100Z; IPW90R500C3FKSA1; FQH8N100C; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Wolfspeed, Inc. Base Product Number: C2M0280120 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 20V

Win Source Part Number: 1050763-C2M0280120D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Z-FET™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
Power Dissipation (Max): 62.5W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 259 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW12N120K5; STW12NK90Z; STW13NK100Z; IPW90R500C3FKSA1; FQH8N100C;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C2M0280120
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V

Buy Now Datasheet
Single FETs, MOSFETs - C2M0280120D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C2M0280120D
Single FETs, MOSFETs C2M0280120D
SICFET N-CH 1200V 10A TO247-3

SICFET N-CH 1200V 10A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - C2M0280120D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C2M0280120D-ND
Single FETs, MOSFETs C2M0280120D-ND
N-Channel 1200V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3

N-Channel 1200V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200V 10A MOSFET Transistor
278-C2M0280120D
1200V 10A MOSFET Transistor 278-C2M0280120D
SICFET N-CH 1200V 10A TO247-3 Product overview: C2M0280120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M0280120D can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 10A TO247-3 Product overview: C2M0280120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M0280120D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C2M0280120D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C2M0280120D
Silicon Carbide MOSFETs C2M0280120D
Silicon Carbide Power MOSFET Z-FETTM MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-up RoHS Compliant, Halogen Free Benefits Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Increased System Reliability Applications Lighting Switch Mode Power Supplies High Voltage DC/DC Converters HVAC

Silicon Carbide Power MOSFET Z-FETTM MOSFET

Features

  • High Speed Switching with Low Capacitances
  • High Blocking Voltage with Low RDS(on)
  • Easy to Parallel and Simple to Drive
  • Resistant to Latch-up
  • RoHS Compliant, Halogen Free

Benefits

  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased System Switching Frequency
  • Increased System Reliability

Applications

  • Lighting
  • Switch Mode Power Supplies
  • High Voltage DC/DC Converters
  • HVAC
Supplier's Site Datasheet
MOSFET N-CH 1200V 10A TO-247-3 - 163-C2M0280120D - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1200V 10A TO-247-3
163-C2M0280120D
MOSFET N-CH 1200V 10A TO-247-3 163-C2M0280120D
MOSFET N-CH 1200V 10A TO-247-3

MOSFET N-CH 1200V 10A TO-247-3

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 10A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6013 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 10A, To-247; Mosfet Module Configuration Wolfspeed
98Y6013
Mosfet, N-Ch, 1.2Kv, 10A, To-247; Mosfet Module Configuration Wolfspeed 98Y6013
MOSFET, N-CH, 1.2KV, 10A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 10A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C2M0280120D
MOSFET C2M0280120D
MOSFET SIC MOSFET 1200V RDS ON 280 mOhm

MOSFET SIC MOSFET 1200V RDS ON 280 mOhm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0280120D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C2M0280120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C2M0280120D
SICFET N-CH 1200V 10A TO247-3

SICFET N-CH 1200V 10A TO247-3

Supplier's Site
Transistor - 108841826 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
108841826
Transistor 108841826
MOSFET, N-CH, 1.2KV, 10A, TO-247, MOSFET CONFIGURATION:SINGLE , TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:10A, DRAIN SOURCE VOLTAGE VDS:1.2KV, ON RESISTANCE RDS(ON):0.28OHM, NO. OF PINS:3PINS, PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 1.2KV, 10A, TO-247, MOSFET CONFIGURATION:SINGLE, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:10A, DRAIN SOURCE VOLTAGE VDS:1.2KV, ON RESISTANCE RDS(ON):0.28OHM, NO. OF PINS:3PINS, PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Wolfspeed Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Richardson RFPD Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number C2M0280120D 1050763-C2M0280120D C2M0280120D C2M0280120D-ND 278-C2M0280120D C2M0280120D 163-C2M0280120D 98Y6013 C2M0280120D C2M0280120D 108841826
Product Name 2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs 1200V 10A MOSFET Transistor Silicon Carbide MOSFETs MOSFET N-CH 1200V 10A TO-247-3 Mosfet, N-Ch, 1.2Kv, 10A, To-247; Mosfet Module Configuration Wolfspeed MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Transistor Technology / Material 2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET SiCFET (Silicon Carbide) Silicon Carbide
Package Type TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 Tube TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 1200 volts 1200 volts
IDSS 10000 milliamps 10000 milliamps
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