MOSFET 6N-CH 1200V 29.5A MODULE
MOSFET MODULE, SIX N-CH, 1.2KV, 29.5A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:29.5A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
MOSFET 6N-CH 1200V 29.5A MODULE
| ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CCS020M12CM2 | 94X0464 | CCS020M12CM2 |
| Product Name | FET, MOSFET Arrays | Mosfet Module, Six N-Ch, 1.2Kv, 29.5A; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 6 N-Channel (3-Phase Bridge) | ||
| Transistor Technology / Material | Silicon Carbide (SiC) | ||
| V(BR)DSS | 1200 volts | ||
| IDSS | 29500 milliamps | 29500 milliamps |
