Wolfspeed FET, MOSFET Arrays CCS020M12CM2

Description
MOSFET 6N-CH 1200V 29.5A MODULE
  • FET, MOSFET Arrays - CCS020M12CM2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Silicon Carbide MOSFET Modules - CCS020M12CM2 - Richardson RFPD
    Richardson RFPD
  • Mosfet Module, Six N-Ch, 1.2Kv, 29.5A; Mosfet Module Configuration Wolfspeed - 94X0464 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CCS020M12CM2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET 6N-CH 1200V 29.5A MODULE
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - CCS020M12CM2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
CCS020M12CM2
FET, MOSFET Arrays CCS020M12CM2
MOSFET 6N-CH 1200V 29.5A MODULE

MOSFET 6N-CH 1200V 29.5A MODULE

Supplier's Site Datasheet
Silicon Carbide MOSFET Modules - CCS020M12CM2 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CCS020M12CM2
Silicon Carbide MOSFET Modules CCS020M12CM2
1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Note: Please see Associated Products tab above for recommended gate driver

1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module

Features

  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Ease of Paralleling
  • Copper Baseplate and Aluminum Nitride Insulator

Benefits

  • Enables Compact and Lightweight Systems
  • High Efficiency Operation
  • Mitigates Over-voltage Protection
  • Reduced Thermal Requirements
  • Reduced System Cost

Note: Please see Associated Products tab above for recommended gate driver

Supplier's Site
Mosfet Module, Six N-Ch, 1.2Kv, 29.5A; Mosfet Module Configuration Wolfspeed - 94X0464 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Module, Six N-Ch, 1.2Kv, 29.5A; Mosfet Module Configuration Wolfspeed
94X0464
Mosfet Module, Six N-Ch, 1.2Kv, 29.5A; Mosfet Module Configuration Wolfspeed 94X0464
MOSFET MODULE, SIX N-CH, 1.2KV, 29.5A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:29.5A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

MOSFET MODULE, SIX N-CH, 1.2KV, 29.5A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:29.5A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CCS020M12CM2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CCS020M12CM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CCS020M12CM2
MOSFET 6N-CH 1200V 29.5A MODULE

MOSFET 6N-CH 1200V 29.5A MODULE

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Richardson RFPD Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CCS020M12CM2 CCS020M12CM2 94X0464 CCS020M12CM2
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules Mosfet Module, Six N-Ch, 1.2Kv, 29.5A; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 6 N-Channel (3-Phase Bridge)
Transistor Technology / Material Silicon Carbide (SiC)
V(BR)DSS 1200 volts
IDSS 29500 milliamps 29500 milliamps
Unlock Full Specs
to access all available technical data