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Win Source Part Number: 1022636-APT106N60B2C
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Power Dissipation (Max): 833W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT106
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 106A T-MAX
MOSFET N-CH 600V 106A T-MAX Product overview: APT106N60B2C6 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 106A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 106A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT106N60B2C6 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 106A T-MAX
| Richardson RFPD | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | APT106N60B2C6 | 1022636-APT106N60B2C6 | APT106N60B2C6 | 278-APT106N60B2C6 | APT106N60B2C6 |
| Product Name | Power MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 600V 106A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| PD | 833000 milliwatts | 833000 milliwatts | 833000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3 | TO-247; TO-247-3 Variant | Tube | TO-247; TO-247-3 Variant | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |