Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single APT106N60B2C6

Description
Win Source Part Number: 1022636-APT106N60B2C 6 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3.4mA Power Dissipation (Max): 833W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT106 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1022636-APT106N60B2C 6 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3.4mA Power Dissipation (Max): 833W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT106 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1022636-APT106N60B2C6 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1022636-APT106N60B2C6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1022636-APT106N60B2C6
Win Source Part Number: 1022636-APT106N60B2C 6 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3.4mA Power Dissipation (Max): 833W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microchip Technology Base Product Number: APT106 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1022636-APT106N60B2C6
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Power Dissipation (Max): 833W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT106
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - APT106N60B2C6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
APT106N60B2C6
Single FETs, MOSFETs APT106N60B2C6
MOSFET N-CH 600V 106A T-MAX

MOSFET N-CH 600V 106A T-MAX

Supplier's Site Datasheet
Singapore
600V 106A MOSFET Transistor
278-APT106N60B2C6
600V 106A MOSFET Transistor 278-APT106N60B2C6
MOSFET N-CH 600V 106A T-MAX Product overview: APT106N60B2C6 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 106A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 106A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT106N60B2C6 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 106A T-MAX Product overview: APT106N60B2C6 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 106A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 106A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT106N60B2C6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Power MOSFET Transistor - APT106N60B2C6 - Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
APT106N60B2C6
Power MOSFET Transistor APT106N60B2C6
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT106N60B2C6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT106N60B2C6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT106N60B2C6
MOSFET N-CH 600V 106A T-MAX

MOSFET N-CH 600V 106A T-MAX

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 1022636-APT106N60B2C6 APT106N60B2C6 278-APT106N60B2C6 APT106N60B2C6 APT106N60B2C6
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 600V 106A MOSFET Transistor Power MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
PD 833000 milliwatts 833000 milliwatts 833000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-247; TO-247-3 Variant Tube TO-247; TO-247-3 Variant
Transistor Technology / Material MOSFET (Metal Oxide)
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