Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
N-Channel 600V 73A (Tc) 893W (Tc) Through Hole 264 MAX™ [L2]
MOSFET N-CH 600V 73A 264 MAX
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | APT60M75L2LLG | APT60M75L2LLG-ND | APT60M75L2LLG |
| Product Name | Power MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.0750 ohms |
