Wolfspeed Silicon Carbide MOSFET Modules CAB600M33LM3

Description
Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Stray Inductance (9.5 nH) AlSiC Baseplate High Thermal Conductivity Silicon Nitride Substrate Increased Thermal-Mechanical Performance 3300 V Drain-Source Voltage System Benefits Reduced Volume, Weight Overall System Level Cost Higher Reliability Higher System Efficiency Reduced Cooling Requirements Improved Thermal Cycling and Longer Lifetime Typical Applications Heavy-Duty E-Mobility: Transportation and Mining Ultra-Fast DC Chargers Industrial Motor Drives Industrial Uninterruptable Power Supply (UPS) Systems Marine and Aerospace Propulsion Terrestrial Power Distribution Systems HVDC and FACTS Controllers
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Description
Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Stray Inductance (9.5 nH) AlSiC Baseplate High Thermal Conductivity Silicon Nitride Substrate Increased Thermal-Mechanical Performance 3300 V Drain-Source Voltage System Benefits Reduced Volume, Weight Overall System Level Cost Higher Reliability Higher System Efficiency Reduced Cooling Requirements Improved Thermal Cycling and Longer Lifetime Typical Applications Heavy-Duty E-Mobility: Transportation and Mining Ultra-Fast DC Chargers Industrial Motor Drives Industrial Uninterruptable Power Supply (UPS) Systems Marine and Aerospace Propulsion Terrestrial Power Distribution Systems HVDC and FACTS Controllers
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB600M33LM3 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB600M33LM3
Silicon Carbide MOSFET Modules CAB600M33LM3
Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Stray Inductance (9.5 nH) AlSiC Baseplate High Thermal Conductivity Silicon Nitride Substrate Increased Thermal-Mechanical Performance 3300 V Drain-Source Voltage System Benefits Reduced Volume, Weight Overall System Level Cost Higher Reliability Higher System Efficiency Reduced Cooling Requirements Improved Thermal Cycling and Longer Lifetime Typical Applications Heavy-Duty E-Mobility: Transportation and Mining Ultra-Fast DC Chargers Industrial Motor Drives Industrial Uninterruptable Power Supply (UPS) Systems Marine and Aerospace Propulsion Terrestrial Power Distribution Systems HVDC and FACTS Controllers

Technical Features

  • High Power Density Footprint
  • High Junction Temperature (175 C) Operation
  • Low Stray Inductance (9.5 nH)
  • AlSiC Baseplate
  • High Thermal Conductivity Silicon Nitride Substrate
  • Increased Thermal-Mechanical Performance
  • 3300 V Drain-Source Voltage

System Benefits

  • Reduced Volume, Weight Overall System Level Cost
  • Higher Reliability
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Improved Thermal Cycling and Longer Lifetime

Typical Applications

  • Heavy-Duty E-Mobility: Transportation and Mining
  • Ultra-Fast DC Chargers
  • Industrial Motor Drives
  • Industrial Uninterruptable Power Supply (UPS) Systems
  • Marine and Aerospace Propulsion
  • Terrestrial Power Distribution Systems
  • HVDC and FACTS Controllers
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CAB600M33LM3
Product Name Silicon Carbide MOSFET Modules
Package Type LM
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