Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80L APT48M80L

Description
Manufacturer: Microchip Technology Win Source Part Number: 911641-APT48M80L Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 800 V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L] Package: TO-264-3, TO-264AA Package: Tube Mounting: Through Hole Family Name: APT48M80 Categories: Discrete Semiconductor Products Case / Package: TO-264 [L] ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 28 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: APT48M80LMI, APT48M80LMI-ND
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 911641-APT48M80L Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 800 V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L] Package: TO-264-3, TO-264AA Package: Tube Mounting: Through Hole Family Name: APT48M80 Categories: Discrete Semiconductor Products Case / Package: TO-264 [L] ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 28 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: APT48M80LMI, APT48M80LMI-ND
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80L - 911641-APT48M80L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80L
911641-APT48M80L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80L 911641-APT48M80L
Manufacturer: Microchip Technology Win Source Part Number: 911641-APT48M80L Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 800 V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L] Package: TO-264-3, TO-264AA Package: Tube Mounting: Through Hole Family Name: APT48M80 Categories: Discrete Semiconductor Products Case / Package: TO-264 [L] ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 28 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: APT48M80LMI, APT48M80LMI-ND

Manufacturer: Microchip Technology
Win Source Part Number: 911641-APT48M80L
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 800 V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L]
Package: TO-264-3, TO-264AA
Package: Tube
Mounting: Through Hole
Family Name: APT48M80
Categories: Discrete Semiconductor Products
Case / Package: TO-264 [L]
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 28 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: APT48M80LMI, APT48M80LMI-ND

Buy Now Datasheet
Power MOSFET Transistor - APT48M80L - Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
APT48M80L
Power MOSFET Transistor APT48M80L
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT48M80L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT48M80L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT48M80L
MOSFET N-CH 800V 49A TO264

MOSFET N-CH 800V 49A TO264

Supplier's Site

Technical Specifications

  Win Source Electronics Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 911641-APT48M80L APT48M80L APT48M80L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80L Power MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data