Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
MOSFET N-CH 1000V 37A TO264
N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole TO-264
MOSFET N-CH 1000V 37A TO264
| Richardson RFPD | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | APT37M100L | APT37M100L | APT37M100L-ND | APT37M100L |
| Product Name | Power MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.3300 ohms | |||
| Package Type | TO-264 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 1000 volts |
