Microchip Technology, Inc. Single FETs, MOSFETs APT37M100L

Description
N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole TO-264
Request a Quote Datasheet
Description
N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole TO-264
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - APT37M100L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
APT37M100L-ND
Single FETs, MOSFETs APT37M100L-ND
N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole TO-264

N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole TO-264

Buy Now Datasheet
Single FETs, MOSFETs - APT37M100L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
APT37M100L
Single FETs, MOSFETs APT37M100L
MOSFET N-CH 1000V 37A TO264

MOSFET N-CH 1000V 37A TO264

Supplier's Site Datasheet
Power MOSFET Transistor - APT37M100L - Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
APT37M100L
Power MOSFET Transistor APT37M100L
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT37M100L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT37M100L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT37M100L
MOSFET N-CH 1000V 37A TO264

MOSFET N-CH 1000V 37A TO264

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number APT37M100L-ND APT37M100L APT37M100L APT37M100L
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Power MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264 TO-264-3, TO-264AA
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 1000 volts
IDSS 37000 milliamps
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