The C3M0065100K is a 1000 V silicon carbide N-channel enhancement mode MOSFET designed for high-efficiency switching applications such as EV battery chargers and renewable energy systems. It is packaged in a TO-247-4L with 8 mm of creepage distance between drain and source. The device has a typical on-state resistance of 65 mΩ at 25°C and 95 mΩ at 150°C, with a continuous drain current of 21 A at 100°C case temperature and a maximum power dissipation of 110 W. Thermal resistance from junction to case is 0.94°C/W. The gate-source voltage rating is -4 V to 15 V, with a transient maximum of +19 V. It is RoHS compliant and meets JEDEC J-STD-020 for solder temperature. Switching performance includes a turn-on energy of 127 µJ and turn-off energy of 36 µJ at 700 V and 20 A.
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Features
N-Channel 1000V 35A (Tc) 113.5W (Tc) Through Hole TO-247-4L
SICFET N-CH 1000V 35A TO247-4L Product overview: C3M0065100K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0065100K can be used for catalog matching and distributor lookup.
SiC MOSFET N-Channel 1000V 35A TO-247-4
SiC MOSFET N-Channel 1000V 35A TO-247-4
SiC MOSFET N-Channel 1000V 35A TO-247-4
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324544-C3M0065100K
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Power Dissipation (Max): 113.5W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Base Product Number: C3M0065100
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant
MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4
SICFET N-CH 1000V 35A TO247-4L
MOSFET, N-CH, 1KV, 35A, TO-247; MOSFET Module Configuration:Single
SICFET N-CH 1000V 35A TO247-4L
| Wolfspeed | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C3M0065100K | C3M0065100K-ND | 278-C3M0065100K | 1253453P | 1253453 | 1324544-C3M0065100K | C3M0065100K | C3M0065100K | 02AC3564 | C3M0065100K |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Single FETs, MOSFETs | 1000V 35A MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 1Kv, 35A, To-247; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | SiCFET (Silicon Carbide) | |||||||
| Package Type | TO-247-4 | TO-247; TO-247-4 | Tube | TO-247; TO-247 | TO-247; To-247 | TO-247; SOT3; TO-247-4 | TO-247; TO-247-4 | TO-3; TO-247 | TO-247; TO-247-4 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 1000 volts | 1000 volts |
