Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0065100K

Description
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster. Features Minimum of 1kV Vbr across entire operating temperature range (no need to derate) New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0065100K - Wolfspeed
    Wolfspeed
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324544-C3M0065100K - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - C3M0065100K-ND - DigiKey
    DigiKey
  • MOSFETs - 1253453P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1253453 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1684886 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - C3M0065100K - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Silicon Carbide MOSFETs - C3M0065100K - Richardson RFPD
    Richardson RFPD
  • Mosfet, N-Ch, 1Kv, 35A, To-247; Mosfet Module Configuration Wolfspeed - 02AC3564 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0065100K - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster. Features Minimum of 1kV Vbr across entire operating temperature range (no need to derate) New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0065100K - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0065100K
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0065100K
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster. Features Minimum of 1kV Vbr across entire operating temperature range (no need to derate) New low-impedance package with driver source > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.

Features

  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • New low-impedance package with driver source
  • > 8mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324544-C3M0065100K - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324544-C3M0065100K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324544-C3M0065100K
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324544-C3M0065100K Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Power Dissipation (Max): 113.5W (Tc) Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V Vgs (Max): +19V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-4 ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: Not Applicable HTSUS: 8541.29.0095 Base Product Number: C3M0065100 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324544-C3M0065100K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Power Dissipation (Max): 113.5W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Base Product Number: C3M0065100
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Single FETs, MOSFETs - C3M0065100K-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C3M0065100K-ND
Single FETs, MOSFETs C3M0065100K-ND
N-Channel 1000V 35A (Tc) 113.5W (Tc) Through Hole TO-247-4L

N-Channel 1000V 35A (Tc) 113.5W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
MOSFETs - 1253453P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1253453P
MOSFETs 1253453P
SiC MOSFET N-Channel 1000V 35A TO-247-4

SiC MOSFET N-Channel 1000V 35A TO-247-4

Supplier's Site
MOSFETs - 1253453 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1253453
MOSFETs 1253453
SiC MOSFET N-Channel 1000V 35A TO-247-4

SiC MOSFET N-Channel 1000V 35A TO-247-4

Supplier's Site
MOSFETs - 1684886 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1684886
MOSFETs 1684886
SiC MOSFET N-Channel 1000V 35A TO-247-4

SiC MOSFET N-Channel 1000V 35A TO-247-4

Supplier's Site
Single FETs, MOSFETs - C3M0065100K - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0065100K
Single FETs, MOSFETs C3M0065100K
SICFET N-CH 1000V 35A TO247-4L

SICFET N-CH 1000V 35A TO247-4L

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0065100K - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0065100K
Silicon Carbide MOSFETs C3M0065100K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • New C3M SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
Mosfet, N-Ch, 1Kv, 35A, To-247; Mosfet Module Configuration Wolfspeed - 02AC3564 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 35A, To-247; Mosfet Module Configuration Wolfspeed
02AC3564
Mosfet, N-Ch, 1Kv, 35A, To-247; Mosfet Module Configuration Wolfspeed 02AC3564
MOSFET, N-CH, 1KV, 35A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1kV; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N-CH, 1KV, 35A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1kV; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0065100K
MOSFET C3M0065100K
MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4

MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0065100K - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0065100K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0065100K
SICFET N-CH 1000V 35A TO247-4L

SICFET N-CH 1000V 35A TO247-4L

Supplier's Site

Technical Specifications

  Wolfspeed Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Richardson RFPD Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C3M0065100K 1324544-C3M0065100K C3M0065100K-ND 1253453P 1253453 C3M0065100K C3M0065100K 02AC3564 C3M0065100K C3M0065100K
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs Silicon Carbide MOSFETs Mosfet, N-Ch, 1Kv, 35A, To-247; Mosfet Module Configuration Wolfspeed MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247-4 TO-247; SOT3; TO-247-4 TO-247; TO-247-4 TO-247; TO-247 TO-247; To-247 TO-247; TO-247-4 TO-247; TO-247-4 TO-3; TO-247 TO-247; TO-247-4
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
Number of units in IC 1
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