Wolfspeed FET, MOSFET Arrays CAB008M12GM3

Description
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) Chassis Mount
  • FET, MOSFET Arrays - 1697-CAB008M12GM3-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFET Modules - CAB008M12GM3 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB008M12GM3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • FET, MOSFET Arrays - CAB008M12GM3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) Chassis Mount
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 1697-CAB008M12GM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB008M12GM3-ND
FET, MOSFET Arrays 1697-CAB008M12GM3-ND
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) Chassis Mount

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) Chassis Mount

Buy Now Datasheet
Silicon Carbide MOSFET Modules - CAB008M12GM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB008M12GM3
Silicon Carbide MOSFET Modules CAB008M12GM3
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation

Applications

  • EV Chargers
  • Solar
  • High-Efficiency Converters / Inverters
  • Motor and Traction Drives
  • Smart-Grid / Grid-Tied Distributed Generation

Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB008M12GM3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAB008M12GM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAB008M12GM3
SIC 2N-CH 1200V

SIC 2N-CH 1200V

Supplier's Site
FET, MOSFET Arrays - CAB008M12GM3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
CAB008M12GM3
FET, MOSFET Arrays CAB008M12GM3
1200V 2B HALF-BRIDGE

1200V 2B HALF-BRIDGE

Supplier's Site Datasheet

Technical Specifications

  DigiKey Richardson RFPD Acme Chip Technology Co., Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1697-CAB008M12GM3-ND CAB008M12GM3 CAB008M12GM3 CAB008M12GM3
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Package Type Module GM3 Module
Packing Method Tray
Polarity N-Channel; 2 N-Channel (Half Bridge)
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