Features
N-Channel 1200V 19A (Tc) 125W (Tc) Through Hole TO-247-3
N-channel SiC MOSFET 1.2kV 19A TO247
N-channel SiC MOSFET 1.2kV 19A TO247
N-channel SiC MOSFET 1.2kV 19A TO247
SICFET N-CH 1200V 19A TO247-3
SICFET N-CH 1200V 19A TO247-3 Product overview: C2M0160120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M0160120D can be used for catalog matching and distributor lookup.
Manufacturer: Cree/Wolfspeed
Win Source Part Number: 1027138-C2M0160120D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: C2M0160120D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 20V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 500μA
Max Gate Charge: 32.6nC @ 20V
Max Input Capacitance: 527pF @ 800V
Maximum Gate-Source Voltage: +25V, -10V
Maximum Rds On at Id,Vgs: 196 mOhm @ 10A, 20V
Alternative Parts (Cross-Reference): SCT3160KLGC11; SCT3160KLHRC11; SCT2160KE; SCT2160KEC;
Introduction Date: September 02, 2015
ECCN: ERA99
Country of Origin: China, Philippines, United States of America
Estimated EOL Date: 2031
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
The C2M0160120D supports a nominal 17.7 Amps steady state current and may replace the C2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperature RDS(on) of 160mΩ and maximum RDS(on) at 150°C of 290mΩ are ideal for power conversion applications from 5-20kW. This product beats silicon IGBTs and MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system cost. Availability of a lower RDS(on) version of the Gen2 SiC MOSFET line allows customers greater flexibility to optimize the price/performance advantage of our Z-FET devices.
MOSFET, N-CH, 1.2KV, 19A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power RoHS Compliant: Yes
SICFET N-CH 1200V 19A TO247-3
MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
| Wolfspeed | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Richardson RFPD | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C2M0160120D | C2M0160120D-ND | 9047348 | 9047348P | C2M0160120D | 278-C2M0160120D | 1027138-C2M0160120D | C2M0160120D | 98Y6012 | C2M0160120D | C2M0160120D |
| Product Name | 2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | 1200V 19A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - C2M0160120D | Silicon Carbide MOSFETs | Mosfet, N-Ch, 1.2Kv, 19A, To-247; Transistor Polarity Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Transistor Technology / Material | 2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||||
| Package Type | TO-247-3 | TO-247; TO-247-3 | TO-247; To-247 | TO-247; TO-247 | TO-247; TO-247-3 | Tube | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| Number of units in IC | 1 |
