The APT5010JN is an N-channel enhancement mode high voltage power MOSFET in the ISOTOP® package, rated for 500 V drain-source voltage and 48 A continuous drain current at 25°C. It has a maximum on-state resistance of 0.10 Ω at 10 V gate-source voltage and a total power dissipation of 520 W at 25°C. The device operates from -55°C to 150°C and meets UL 94 V-0 flammability standards. The ISOTOP® package measures 31.5 mm by 11.8 mm with a height of 4.9 mm and provides 2500 V RMS isolation between terminals and the mounting base. The part includes an integrated body diode with a forward voltage of 1.8 V and reverse recovery time up to 830 ns.
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| Richardson RFPD | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | APT5010JN |
| Product Name | Power MOSFET Transistor |
| rDS(on) | 0.1000 ohms |