N-Channel 1000V 23A (Tc) 565W (Tc) Through Hole T-MAX™ [B2]
Manufacturer: Microchip Technology
Win Source Part Number: 861569-APT10045B2LLG
Series: POWER MOS 7®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 1000 V 23A (Tc) 565W (Tc) Through Hole T-MAX™ [B2]
Package: TO-247-3 Variant
Package: Tube
Mounting: Through Hole
Family Name: APT10045
Categories: Discrete Semiconductor Products
Case / Package: T-MAX™ [B2]
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 78 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 28 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
MOSFET N-CH 1000V 23A T-MAX
| DigiKey | Win Source Electronics | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | APT10045B2LLG-ND | 861569-APT10045B2LLG | APT10045B2LLG | APT10045B2LLG |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT10045B2LLG | Power MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
