Wolfspeed Silicon Carbide MOSFET Modules CAB5R0A23GM4T

Description
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Pre-Applied Thermal Interface Material Typical Applications DC Fast Chargers Energy Storage Systems High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Solar Inverters System Benefits Enables Compact, Lightweight Systems Enables Two-Level Conversion for 1500 VDC Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
  • Silicon Carbide MOSFET Modules - CAB5R0A23GM4T - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-CAB5R0A23GM4T-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Pre-Applied Thermal Interface Material Typical Applications DC Fast Chargers Energy Storage Systems High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Solar Inverters System Benefits Enables Compact, Lightweight Systems Enables Two-Level Conversion for 1500 VDC Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB5R0A23GM4T - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB5R0A23GM4T
Silicon Carbide MOSFET Modules CAB5R0A23GM4T
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminium Nitride Substrate Pre-Applied Thermal Interface Material Typical Applications DC Fast Chargers Energy Storage Systems High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Solar Inverters System Benefits Enables Compact, Lightweight Systems Enables Two-Level Conversion for 1500 VDC Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

Technical Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation
  • Aluminium Nitride Substrate
  • Pre-Applied Thermal Interface Material

Typical Applications

  • DC Fast Chargers
  • Energy Storage Systems
  • High-Efficiency Converters / Inverters
  • Renewable Energy
  • Smart-Grid / Grid-Tied Distributed Generation
  • Solar Inverters

System Benefits

  • Enables Compact, Lightweight Systems
  • Enables Two-Level Conversion for 1500 VDC Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CAB5R0A23GM4T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB5R0A23GM4T-ND
FET, MOSFET Arrays 1697-CAB5R0A23GM4T-ND
MOSFET 2N-CH 2300V 150A

MOSFET 2N-CH 2300V 150A

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Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number CAB5R0A23GM4T 1697-CAB5R0A23GM4T-ND
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays
Package Type GM4 Module
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