1200V 40MOHM SIC MOSFET
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
Benefits
Applications
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324550-C3M0040120K
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Power Dissipation (Max): 326W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 69
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0040120K,16
Base Product Number: C3M0040120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): Not Applicable
N-Channel 1200V 66A (Tc) 326W (Tc) Through Hole TO-247-4L
1200V 40MOHM SIC MOSFET
| ODG (Origin Data Global) | RS Components, Ltd. | Richardson RFPD | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | C3M0040120K | 2488931 | C3M0040120K | 1324550-C3M0040120K | 1697-C3M0040120K-ND | C3M0040120K |
| Product Name | Single FETs, MOSFETs | MOSFETs | Silicon Carbide MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 1200 volts | |||||
| IDSS | 66000 milliamps | |||||
| PD | 326000 milliwatts | 326000 milliwatts |