Wolfspeed Silicon Carbide MOSFETs C3M0040120K

Silicon Carbide Power MOSFET
C3M^TM MOSFET Technology Features

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Halogen free, RoHS compliant

Benefits

• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

Applications

• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch

N-Channel 1200V 66A (Tc) 326W (Tc) Through Hole TO-247-4L

Wolfspeed C3M0040120K

Wolfspeed C3M0040120K

Wolfspeed C3M0040120K

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324550-C3M0040120K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Power Dissipation (Max): 326W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 69
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0040120K,1697-C3M0040120K
Base Product Number: C3M0040120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): Not Applicable

1200V 40MOHM SIC MOSFET