N-Channel 1200V 7.6A (Tc) 50W (Tc) Through Hole TO-247-3
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0350120D includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.
Features
Benefits
Applications
SICFET N-CH 1200V 7.6A TO247-3
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324543-C3M0350120D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0350120D
Base Product Number: C3M0350120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): Not Applicable
SICFET N-CH 1200V 7.6A TO247-3
| DigiKey | Richardson RFPD | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1697-C3M0350120D-ND | C3M0350120D | C3M0350120D | 1324543-C3M0350120D | C3M0350120D |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | |||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 |
| rDS(on) | 0.3500 ohms | ||||
| V(BR)DSS | 1200 volts |