Wolfspeed 1200V 7.6A MOSFET Transistor C3M0350120D

SICFET N-CH 1200V 7.6A TO247-3 Product overview: C3M0350120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 7.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 7.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0350120D can be used for catalog matching and distributor lookup.

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324543-C3M0350120D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0350120D
Base Product Number: C3M0350120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): Not Applicable

SICFET N-CH 1200V 7.6A TO247-3

N-Channel 1200V 7.6A (Tc) 50W (Tc) Through Hole TO-247-3

Silicon Carbide Power MOSFET
C3M^TM MOSFET Technology

Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0350120D includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

• 3rd Generation SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant

Benefits

• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency

Applications

• Renewable energy
• High voltage DC/DC converters
• Switch Mode Power Supplies
• UPS