Wolfspeed Single FETs, MOSFETs C3M0350120D

Description
N-Channel 1200V 7.6A (Tc) 50W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 1200V 7.6A (Tc) 50W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1697-C3M0350120D-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0350120D-ND
Single FETs, MOSFETs 1697-C3M0350120D-ND
N-Channel 1200V 7.6A (Tc) 50W (Tc) Through Hole TO-247-3

N-Channel 1200V 7.6A (Tc) 50W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0350120D - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0350120D
Silicon Carbide MOSFETs C3M0350120D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0350120D includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy High voltage DC/DC converters Switch Mode Power Supplies UPS

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0350120D includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

  • 3rd Generation SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • UPS
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0350120D - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0350120D
Single FETs, MOSFETs C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3

SICFET N-CH 1200V 7.6A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324543-C3M0350120D - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324543-C3M0350120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324543-C3M0350120D
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324543-C3M0350120D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 50W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 85 HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0350120D Base Product Number: C3M0350120 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): Not Applicable

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324543-C3M0350120D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0350120D
Base Product Number: C3M0350120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): Not Applicable

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0350120D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0350120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3

SICFET N-CH 1200V 7.6A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1697-C3M0350120D-ND C3M0350120D C3M0350120D 1324543-C3M0350120D C3M0350120D
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3
rDS(on) 0.3500 ohms
V(BR)DSS 1200 volts
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