Wolfspeed Silicon Carbide MOSFETs CPM3-0650-0060A

Description
Features Low On-State Resistance over Temperature Low Parasitic Capacitances Fast Diode with ultra low reverse recovery High Temperature Operation (Tj = 175C) Benefits Improves System Efficiency with lower switching and conduction losses Enables high switching frequency operation Improves System Level Power Density Reduces System Size; Weight; and Cooling Requirements Applications Industrial Power Supplies Server/Telecom EV-Charging Systems Energy Storage Systems (ESS) Uninterruptible Power Supplies (UPS) Battery Management Systems (BMS)
  • Silicon Carbide MOSFETs - CPM3-0650-0060A - Richardson RFPD
    Richardson RFPD
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Description
Features Low On-State Resistance over Temperature Low Parasitic Capacitances Fast Diode with ultra low reverse recovery High Temperature Operation (Tj = 175C) Benefits Improves System Efficiency with lower switching and conduction losses Enables high switching frequency operation Improves System Level Power Density Reduces System Size; Weight; and Cooling Requirements Applications Industrial Power Supplies Server/Telecom EV-Charging Systems Energy Storage Systems (ESS) Uninterruptible Power Supplies (UPS) Battery Management Systems (BMS)
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Suppliers

Company
Product
Description
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Silicon Carbide MOSFETs - CPM3-0650-0060A - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
CPM3-0650-0060A
Silicon Carbide MOSFETs CPM3-0650-0060A
Features Low On-State Resistance over Temperature Low Parasitic Capacitances Fast Diode with ultra low reverse recovery High Temperature Operation (Tj = 175C) Benefits Improves System Efficiency with lower switching and conduction losses Enables high switching frequency operation Improves System Level Power Density Reduces System Size; Weight; and Cooling Requirements Applications Industrial Power Supplies Server/Telecom EV-Charging Systems Energy Storage Systems (ESS) Uninterruptible Power Supplies (UPS) Battery Management Systems (BMS)

Features

  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (Tj = 175C)

Benefits

  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements

Applications

  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)
Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPM3-0650-0060A
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0600 ohms
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