Wolfspeed Silicon Carbide MOSFET Modules CAR600M12HN6

Description
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
  • Silicon Carbide MOSFET Modules - CAR600M12HN6 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAR600M12HN6 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAR600M12HN6 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAR600M12HN6
Silicon Carbide MOSFET Modules CAR600M12HN6
Technical Features Ultra-Low Loss, High Frequency Operation Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current Zero Forward Recovery Voltage Temperature-Independ ent Switching Behavior Applications Railway, Traction, and Motor Drives EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

Technical Features

  • Ultra-Low Loss, High Frequency Operation
  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
  • Zero Reverse Recovery Current
  • Zero Forward Recovery Voltage
  • Temperature-Independent Switching Behavior

Applications

  • Railway, Traction, and Motor Drives
  • EV Chargers
  • High-Efficiency Converters / Inverters
  • Renewable Energy
  • Smart-Grid / Grid-Tied Distributed Generation

System Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAR600M12HN6 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAR600M12HN6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAR600M12HN6
SIC 2N-CH 1200V 908A MODULE

SIC 2N-CH 1200V 908A MODULE

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CAR600M12HN6 CAR600M12HN6
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 110 x 65 mm
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