Microchip Technology, Inc. Silicon Carbide MOSFET Modules APTMC120HR11CT3AG

Description
Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail current Switching frequency up to 20 kHz SiC Schottky Diode (CR1 to CR4) Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
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Description
Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail current Switching frequency up to 20 kHz SiC Schottky Diode (CR1 to CR4) Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
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Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - APTMC120HR11CT3AG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
APTMC120HR11CT3AG
Silicon Carbide MOSFET Modules APTMC120HR11CT3AG
Application Solar converter Uninterruptible Power Supplies Features Q1, Q2 SiC Power MOSFET Low RDS(on) High temperature performance Q3, Q4 Trench + field Stop IGBT3 Low voltage drop Low tail current Switching frequency up to 20 kHz SiC Schottky Diode (CR1 to CR4) Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant

Application

  • Solar converter
  • Uninterruptible Power Supplies

Features

  • Q1, Q2 SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Q3, Q4 Trench + field Stop IGBT3
    • Low voltage drop
    • Low tail current
    • Switching frequency up to 20 kHz
  • SiC Schottky Diode (CR1 to CR4)
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Kelvin emitter for easy drive
  • Internal thermistor for temperature monitoring
  • AlN substrate for improved thermal performance

Benefits

  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile
  • RoHS Compliant
Supplier's Site
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTMC120HR11CT3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTMC120HR11CT3AG
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Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number APTMC120HR11CT3AG APTMC120HR11CT3AG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP3F
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