Wolfspeed Silicon Carbide MOSFET Modules CAB530M12BM3

Description
Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance Design for Fast Switching with Low Power Losses Benefits Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages Reduced Cooling Requirements & Reduced System Cost Optimized Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization Reduced Cooling Requirements & Reduced System Cost Evaluation Gate Driver and Clamped Inductive Load Evaluation Kit Available to Enable Easy Laboratory Testing & System Implementation Applications Railway and Traction EV Charging Infrastructure Industrial Automation & Testing High Frequency Power Supplies Renewable Energy Systems & Grid-Tied Inverters Active Front Ends & AC Inverters
  • Silicon Carbide MOSFET Modules - CAB530M12BM3 - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-CAB530M12BM3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB530M12BM3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance Design for Fast Switching with Low Power Losses Benefits Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages Reduced Cooling Requirements & Reduced System Cost Optimized Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization Reduced Cooling Requirements & Reduced System Cost Evaluation Gate Driver and Clamped Inductive Load Evaluation Kit Available to Enable Easy Laboratory Testing & System Implementation Applications Railway and Traction EV Charging Infrastructure Industrial Automation & Testing High Frequency Power Supplies Renewable Energy Systems & Grid-Tied Inverters Active Front Ends & AC Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB530M12BM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB530M12BM3
Silicon Carbide MOSFET Modules CAB530M12BM3
Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance Design for Fast Switching with Low Power Losses Benefits Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages Reduced Cooling Requirements & Reduced System Cost Optimized Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization Reduced Cooling Requirements & Reduced System Cost Evaluation Gate Driver and Clamped Inductive Load Evaluation Kit Available to Enable Easy Laboratory Testing & System Implementation Applications Railway and Traction EV Charging Infrastructure Industrial Automation & Testing High Frequency Power Supplies Renewable Energy Systems & Grid-Tied Inverters Active Front Ends & AC Inverters

Features

  • Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor
  • Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate
  • Low-Inductance Design for Fast Switching with Low Power Losses

Benefits

  • Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages
  • Reduced Cooling Requirements & Reduced System Cost
  • Optimized Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization
  • Reduced Cooling Requirements & Reduced System Cost
  • Evaluation Gate Driver and Clamped Inductive Load Evaluation Kit Available to Enable Easy Laboratory Testing & System Implementation

Applications

  • Railway and Traction
  • EV Charging Infrastructure
  • Industrial Automation & Testing
  • High Frequency Power Supplies
  • Renewable Energy Systems & Grid-Tied Inverters
  • Active Front Ends & AC Inverters
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CAB530M12BM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB530M12BM3-ND
FET, MOSFET Arrays 1697-CAB530M12BM3-ND
Mosfet Array 2 N-Channel 1200V (1.2kV) 530A Chassis Mount Module

Mosfet Array 2 N-Channel 1200V (1.2kV) 530A Chassis Mount Module

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB530M12BM3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAB530M12BM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAB530M12BM3
SIC 2N-CH 1200V 530A MODULE

SIC 2N-CH 1200V 530A MODULE

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number CAB530M12BM3 1697-CAB530M12BM3-ND CAB530M12BM3
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 62mm Module
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