N-Channel 1200V 30A (Tc) 113.6W (Tc) Surface Mount TO-263-7
SICFET N-CH 1200V 30A TO263-7
SICFET N-CH 1200V 30A TO263-7
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Features
Benefits
Applications
SICFET N-CH 1200V 30A TO263-7
SICFET N-CH 1200V 30A TO263-7
| DigiKey | Richardson RFPD | ODG (Origin Data Global) | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1697-C3M0075120J-TR-ND | C3M0075120J-TR | C3M0075120J-TR | C3M0075120J-TR |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||
| Package Type | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| rDS(on) | 0.0750 ohms | |||
| V(BR)DSS | 1200 volts |
