Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Features
Benefits
Applications
N-Channel 1200V 30A (Tc) 113.6W (Tc) Surface Mount TO-263-7
SICFET N-CH 1200V 30A TO263-7
SICFET N-CH 1200V 30A TO263-7
SICFET N-CH 1200V 30A TO263-7
SICFET N-CH 1200V 30A TO263-7
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0075120J-TR | 1697-C3M0075120J-TR-ND | C3M0075120J-TR | C3M0075120J-TR |
| Product Name | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| rDS(on) | 0.0750 ohms | |||
| Package Type | TO-263-7 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
