Wolfspeed Silicon Carbide MOSFETs C3M0045065J1

Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter and Telecom Power Supplies EV Battery Chargers High voltage DC/DC converters Energy Storage Systems Solar Inverters
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter and Telecom Power Supplies EV Battery Chargers High voltage DC/DC converters Energy Storage Systems Solar Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0045065J1 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0045065J1
Silicon Carbide MOSFETs C3M0045065J1
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter and Telecom Power Supplies EV Battery Chargers High voltage DC/DC converters Energy Storage Systems Solar Inverters

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Datacenter and Telecom Power Supplies
  • EV Battery Chargers
  • High voltage DC/DC converters
  • Energy Storage Systems
  • Solar Inverters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0045065J1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0045065J1-ND
Single FETs, MOSFETs 1697-C3M0045065J1-ND
N-Channel 650V 47A (Tc) 147W (Tc) Surface Mount TO-263-7

N-Channel 650V 47A (Tc) 147W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0045065J1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0045065J1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0045065J1
650V 45 M SIC MOSFET

650V 45 M SIC MOSFET

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number C3M0045065J1 1697-C3M0045065J1-ND C3M0045065J1
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.0450 ohms
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