Microchip Technology, Inc. Power MOSFET Transistor APT37M100B2

Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
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Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
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Suppliers

Company
Product
Description
Supplier Links
Power MOSFET Transistor - APT37M100B2 - Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
APT37M100B2
Power MOSFET Transistor APT37M100B2
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Supplier's Site
Singapore
1000V 37A MOSFET Transistor
278-APT37M100B2
1000V 37A MOSFET Transistor 278-APT37M100B2
MOSFET N-CH 1000V 37A T-MAX Product overview: APT37M100B2 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 37A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 37A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT37M100B2 can be used for catalog matching and distributor lookup.

MOSFET N-CH 1000V 37A T-MAX Product overview: APT37M100B2 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 37A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 37A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT37M100B2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - APT37M100B2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
APT37M100B2-ND
Single FETs, MOSFETs APT37M100B2-ND
N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]

N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT37M100B2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT37M100B2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT37M100B2
MOSFET N-CH 1000V 37A T-MAX

MOSFET N-CH 1000V 37A T-MAX

Supplier's Site

Technical Specifications

  Richardson RFPD ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number APT37M100B2 278-APT37M100B2 APT37M100B2-ND APT37M100B2
Product Name Power MOSFET Transistor 1000V 37A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.3300 ohms
Package Type T-Max™ Tube TO-247; TO-247-3 Variant TO-247; TO-247-3 Variant
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 1000 volts
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