The C3M0065090D is a silicon carbide N-channel enhancement mode MOSFET designed for high-frequency power conversion applications such as renewable energy systems, EV battery chargers, and high-voltage DC/DC converters. It is packaged in a TO-247-3 case with a maximum drain-source voltage of 900 V, a continuous drain current of 23 A at 100 °C, and a typical on-state resistance of 65 mΩ at 25 °C and 90 mΩ at 150 °C. The device features a low reverse recovery charge of 185 nC and a single-pulse avalanche energy rating of 110 mJ. Thermal resistance from junction to case is 1.0 °C/W, and it operates with a junction and storage temperature range of -55 °C to +150 °C. The gate-source voltage is limited to -4 V to +15 V for operation. It is halogen-free and RoHS compliant.
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
Features
N-Channel 900V 36A (Tc) 125W (Tc) Through Hole TO-247-3
Manufacturer: Cree/Wolfspeed
Win Source Part Number: 770969-C3M0065090D
Series: C3M
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Family Name: C3M0065090D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 15V
Manufacturer Package: TO-247-3
Channel Type Type: N
Drain Source Voltage: 900V
Vgs(th) (Maximum) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Maximum) @ Vgs: 30.4nC @ 15V
Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 600V
Vgs (Maximum): +18V, -8V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 78 mOhm @ 20A, 15V
Alternative Parts (Cross-Reference): STW40N95DK5; STW40N95K5; STWA40N95DK5; STWA40N95K5;
Introduction Date: September 02, 2015
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
SICFET N-CH 900V 36A TO247-3 Product overview: C3M0065090D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0065090D can be used for catalog matching and distributor lookup.
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| Wolfspeed | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0065090D | 1697-C3M0065090D-ND | 770969-C3M0065090D | 9158836 | 9158836P | 278-C3M0065090D | C3M0065090D | C3M0065090D | C3M0065090D | 98Y6016 |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0065090D | MOSFETs | MOSFETs | 900V 36A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 900V, 36A, To-247; Mosfet Module Configuration Wolfspeed |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | SiCFET (Silicon Carbide) | |||||||
| Package Type | TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; To-247 | TO-247; TO-247 | Tube | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| PD | 125000 milliwatts | 125 milliwatts | 125000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
