Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0065090D

Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0065090D - Wolfspeed
    Wolfspeed
  • Silicon Carbide MOSFETs - C3M0065090D - Richardson RFPD
    Richardson RFPD
  • MOSFETs - 9158836 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 9158836P - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - C3M0065090D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1697-C3M0065090D-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0065090D - 770969-C3M0065090D - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0065090D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 900V, 36A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6016 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0065090D - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0065090D
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0065090D
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

Features

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0065090D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0065090D
Silicon Carbide MOSFETs C3M0065090D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • New C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • New low impedance package with driver source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
MOSFETs - 9158836 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158836
MOSFETs 9158836
N-chan SiC MOSFET 900V 36A TO247

N-chan SiC MOSFET 900V 36A TO247

Supplier's Site
MOSFETs - 9158836P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158836P
MOSFETs 9158836P
N-chan SiC MOSFET 900V 36A TO247

N-chan SiC MOSFET 900V 36A TO247

Supplier's Site
Single FETs, MOSFETs - C3M0065090D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0065090D
Single FETs, MOSFETs C3M0065090D
SICFET N-CH 900V 36A TO247-3

SICFET N-CH 900V 36A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0065090D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0065090D-ND
Single FETs, MOSFETs 1697-C3M0065090D-ND
N-Channel 900V 36A (Tc) 125W (Tc) Through Hole TO-247-3

N-Channel 900V 36A (Tc) 125W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0065090D - 770969-C3M0065090D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0065090D
770969-C3M0065090D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0065090D 770969-C3M0065090D
Manufacturer: Cree/Wolfspeed Win Source Part Number: 770969-C3M0065090D Series: C3M Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Family Name: C3M0065090D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 15V Manufacturer Package: TO-247-3 Channel Type Type: N Drain Source Voltage: 900V Vgs(th) (Maximum) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Maximum) @ Vgs: 30.4nC @ 15V Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 600V Vgs (Maximum): +18V, -8V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 78 mOhm @ 20A, 15V Alternative Parts (Cross-Reference): STW40N95DK5; STW40N95K5; STWA40N95DK5; STWA40N95K5; Introduction Date: September 02, 2015 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Cree/Wolfspeed
Win Source Part Number: 770969-C3M0065090D
Series: C3M
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Family Name: C3M0065090D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 15V
Manufacturer Package: TO-247-3
Channel Type Type: N
Drain Source Voltage: 900V
Vgs(th) (Maximum) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Maximum) @ Vgs: 30.4nC @ 15V
Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 600V
Vgs (Maximum): +18V, -8V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 78 mOhm @ 20A, 15V
Alternative Parts (Cross-Reference): STW40N95DK5; STW40N95K5; STWA40N95DK5; STWA40N95K5;
Introduction Date: September 02, 2015
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
900V 36A MOSFET Transistor
278-C3M0065090D
900V 36A MOSFET Transistor 278-C3M0065090D
SICFET N-CH 900V 36A TO247-3 Product overview: C3M0065090D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0065090D can be used for catalog matching and distributor lookup.

SICFET N-CH 900V 36A TO247-3 Product overview: C3M0065090D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0065090D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0065090D
MOSFET C3M0065090D
MOSFET G3 SiC MOSFET 900V, 65mOhm

MOSFET G3 SiC MOSFET 900V, 65mOhm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0065090D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0065090D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0065090D
SICFET N-CH 900V 36A TO247-3

SICFET N-CH 900V 36A TO247-3

Supplier's Site
Mosfet, N-Ch, 900V, 36A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6016 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 36A, To-247; Mosfet Module Configuration Wolfspeed
98Y6016
Mosfet, N-Ch, 900V, 36A, To-247; Mosfet Module Configuration Wolfspeed 98Y6016
MOSFET, N-CH, 900V, 36A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:36A; Drain Source Voltage Vds:900V; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V; Product Range:-RoHS Compliant: Yes

MOSFET, N-CH, 900V, 36A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:36A; Drain Source Voltage Vds:900V; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V; Product Range:-RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Wolfspeed Richardson RFPD RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0065090D C3M0065090D 9158836 9158836P C3M0065090D 1697-C3M0065090D-ND 770969-C3M0065090D 278-C3M0065090D C3M0065090D C3M0065090D 98Y6016
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Silicon Carbide MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0065090D 900V 36A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 900V, 36A, To-247; Mosfet Module Configuration Wolfspeed
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode SiCFET (Silicon Carbide) Silicon Carbide
Package Type TO-247-3 TO-247; TO-247-3 TO-247; To-247 TO-247; TO-247 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3 Tube TO-247; TO-247-3 TO-3; TO-247
rDS(on) 0.0650 ohms
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
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