Wolfspeed Silicon Carbide MOSFETs CPM3-1200-0016A

Description
Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and Simple to Drive Benefits Higher System Efficiency Reduced Cooling Requirements Low conduction losses over temperature Increased System Switching Frequency Applications Solar and UPS Inverters EV Motor Drive High Voltage DC/DC Converters Switch Mode Power Supplies Load switch
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and Simple to Drive Benefits Higher System Efficiency Reduced Cooling Requirements Low conduction losses over temperature Increased System Switching Frequency Applications Solar and UPS Inverters EV Motor Drive High Voltage DC/DC Converters Switch Mode Power Supplies Load switch
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - CPM3-1200-0016A - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
CPM3-1200-0016A
Silicon Carbide MOSFETs CPM3-1200-0016A
Silicon Carbide Power MOSFET C3M MOSFET Technology Features High Blocking Voltage with Low on resistance Resistant to Latch-up Fast intrinsic diode with low reverse recovery (Qrr) Easy to Parallel and Simple to Drive Benefits Higher System Efficiency Reduced Cooling Requirements Low conduction losses over temperature Increased System Switching Frequency Applications Solar and UPS Inverters EV Motor Drive High Voltage DC/DC Converters Switch Mode Power Supplies Load switch

Silicon Carbide Power MOSFET C3M MOSFET Technology

Features

  • High Blocking Voltage with Low on resistance
  • Resistant to Latch-up
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to Parallel and Simple to Drive

Benefits

  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Low conduction losses over temperature
  • Increased System Switching Frequency

Applications

  • Solar and UPS Inverters
  • EV Motor Drive
  • High Voltage DC/DC Converters
  • Switch Mode Power Supplies
  • Load switch
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPM3-1200-0016A
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0160 ohms
Unlock Full Specs
to access all available technical data

Similar Products

N-channel 40 V, 6.7 mOhm standard level MOSFET in LFPAK33 - BUK7M6R7-40HX - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 50000 milliamps
View Details
8 suppliers
CSD13383F4 CSD13383F4 12-V N-Channel FemtoFET? MOSFET - CSD13383F4 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 12 volts
IDSS 27000 milliamps
View Details
6 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF7103QTR - 131429-AUIRF7103QTR - Win Source Electronics
Specs
Polarity N-Channel
V(BR)DSS 50 volts
PD 2400 milliwatts
View Details
8 suppliers