Microchip Technology, Inc. Silicon Carbide MOSFET Modules APTMC60TLM14CAG

Description
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant
  • Silicon Carbide MOSFET Modules - APTMC60TLM14CAG - Richardson RFPD
    Richardson RFPD
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Description
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant
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Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - APTMC60TLM14CAG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
APTMC60TLM14CAG
Silicon Carbide MOSFET Modules APTMC60TLM14CAG
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant

Application

  • Uninterruptible Power Supplies

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Kelvin emitter for easy drive
  • M5 power connectors
  • High level of integration
  • AlN substrate for improved thermal performance

Benefits

  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS Compliant
Supplier's Site
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTMC60TLM14CAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTMC60TLM14CAG
SIC 4N-CH 1200V 219A SP6

SIC 4N-CH 1200V 219A SP6

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number APTMC60TLM14CAG APTMC60TLM14CAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6
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