N-Channel 800V 13A (Tc) Through Hole TO-247 [B]
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Manufacturer: Microchip Technology
Win Source Part Number: 911653-APT8065BVRG
Series: POWER MOS V®
Features: N-Channel 800 V 13A (Tc) Through Hole TO-247 [B]
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Family Name: APT8065
Categories: Discrete Semiconductor Products
Case / Package: TO-247 [B]
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 28 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 800V 13A TO247
| DigiKey | Richardson RFPD | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | APT8065BVRG-ND | APT8065BVRG | 911653-APT8065BVRG | APT8065BVRG |
| Product Name | Single FETs, MOSFETs | Power MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8065BVRG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
