Wolfspeed Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode C3M0120100K

Description
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster. Features Minimum of 1kV Vbr across entire operating temperature range (no need to derate) low source inductance package with separate driver source pin > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Avalanche ruggedness
  • Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode - C3M0120100K - Wolfspeed
    Wolfspeed
  • Single FETs, MOSFETs - C3M0120100K-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120100K - 847301-C3M0120100K - Win Source Electronics
    Win Source Electronics
  • Silicon Carbide MOSFETs - C3M0120100K - Richardson RFPD
    Richardson RFPD
  • Mosfet, N-Ch, 1Kv, 22A, To-247-4; Mosfet Module Configuration Wolfspeed - 05AC8339 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120100K - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster. Features Minimum of 1kV Vbr across entire operating temperature range (no need to derate) low source inductance package with separate driver source pin > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Avalanche ruggedness
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode - C3M0120100K - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode
C3M0120100K
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode C3M0120100K
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster. Features Minimum of 1kV Vbr across entire operating temperature range (no need to derate) low source inductance package with separate driver source pin > 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance High blocking voltage with low RDS(on) Avalanche ruggedness

Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.

Features

  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • low source inductance package with separate driver source pin
  • > 8mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1000V 22A MOSFET Transistor
278-C3M0120100K
1000V 22A MOSFET Transistor 278-C3M0120100K
SICFET N-CH 1000V 22A TO247-4L Product overview: C3M0120100K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120100K can be used for catalog matching and distributor lookup.

SICFET N-CH 1000V 22A TO247-4L Product overview: C3M0120100K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120100K can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0120100K-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C3M0120100K-ND
Single FETs, MOSFETs C3M0120100K-ND
N-Channel 1000V 22A (Tc) 83W (Tc) Through Hole TO-247-4L

N-Channel 1000V 22A (Tc) 83W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120100K - 847301-C3M0120100K - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120100K
847301-C3M0120100K
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120100K 847301-C3M0120100K
Manufacturer: Cree/Wolfspeed Win Source Part Number: 847301-C3M0120100K Series: C3M™ Features: 1000 V Package: Tube Family Name: C3M0120100 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 30 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 29 Weeks HTSUS: 8541.29.0095

Manufacturer: Cree/Wolfspeed
Win Source Part Number: 847301-C3M0120100K
Series: C3M™
Features: 1000 V
Package: Tube
Family Name: C3M0120100
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 29 Weeks
HTSUS: 8541.29.0095

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0120100K - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120100K
Silicon Carbide MOSFETs C3M0120100K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • New C3M SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0120100K
MOSFET C3M0120100K
MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4

MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4

Buy Now Datasheet
Mosfet, N-Ch, 1Kv, 22A, To-247-4; Mosfet Module Configuration Wolfspeed - 05AC8339 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 22A, To-247-4; Mosfet Module Configuration Wolfspeed
05AC8339
Mosfet, N-Ch, 1Kv, 22A, To-247-4; Mosfet Module Configuration Wolfspeed 05AC8339
MOSFET, N-CH, 1KV, 22A, TO-247-4; MOSFET Module Configuration:Single ; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1kV; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N-CH, 1KV, 22A, TO-247-4; MOSFET Module Configuration:Single; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1kV; No. of Pins:4Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120100K - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0120100K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0120100K
SICFET N-CH 1000V 22A TO247-4L

SICFET N-CH 1000V 22A TO247-4L

Supplier's Site

Technical Specifications

  Wolfspeed ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Richardson RFPD VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C3M0120100K 278-C3M0120100K C3M0120100K-ND 847301-C3M0120100K C3M0120100K C3M0120100K 05AC8339 C3M0120100K
Product Name Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode 1000V 22A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - C3M0120100K Silicon Carbide MOSFETs MOSFET Mosfet, N-Ch, 1Kv, 22A, To-247-4; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode Silicon Carbide
Package Type TO-247-4 Tube TO-247; TO-247-4 SOT3 TO-247; TO-247-4 TO-3; TO-247 TO-247; TO-247-4
Polarity N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 1000 volts
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