Wolfspeed Silicon Carbide MOSFETs C3M0900170M

Description
Silicon Carbide Power MOSFET N-Channel Enhancement Mode Fully isolated package for simplified assembly High speed switching with low capacitances High blocking voltage with low RDS(on) 12V...18V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate capacitance Halogen free, RoHS compliant Benefits Smooth switching waveforms Reduce switching losses and minimize gate ringing Higher system efficiency Increase system switching frequency Increase system reliability Applications Auxillary power supplies Switch Mode Power Supplies High-Voltage capacitive loads
  • Silicon Carbide MOSFETs - C3M0900170M - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0900170M-ND - DigiKey
    DigiKey
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Description
Silicon Carbide Power MOSFET N-Channel Enhancement Mode Fully isolated package for simplified assembly High speed switching with low capacitances High blocking voltage with low RDS(on) 12V...18V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate capacitance Halogen free, RoHS compliant Benefits Smooth switching waveforms Reduce switching losses and minimize gate ringing Higher system efficiency Increase system switching frequency Increase system reliability Applications Auxillary power supplies Switch Mode Power Supplies High-Voltage capacitive loads
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0900170M - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0900170M
Silicon Carbide MOSFETs C3M0900170M
Silicon Carbide Power MOSFET N-Channel Enhancement Mode Fully isolated package for simplified assembly High speed switching with low capacitances High blocking voltage with low RDS(on) 12V...18V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate capacitance Halogen free, RoHS compliant Benefits Smooth switching waveforms Reduce switching losses and minimize gate ringing Higher system efficiency Increase system switching frequency Increase system reliability Applications Auxillary power supplies Switch Mode Power Supplies High-Voltage capacitive loads

Silicon Carbide Power MOSFET
N-Channel Enhancement Mode

  • Fully isolated package for simplified assembly
  • High speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • 12V...18V / 0V VGS compatible with most flyback controllers
  • Ultra-low drain-gate capacitance
  • Halogen free, RoHS compliant

Benefits

  • Smooth switching waveforms
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase system switching frequency
  • Increase system reliability

Applications

  • Auxillary power supplies
  • Switch Mode Power Supplies
  • High-Voltage capacitive loads
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0900170M-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0900170M-ND
Single FETs, MOSFETs 1697-C3M0900170M-ND
SIC, MOSFET, 900M, 1700V, TO-247

SIC, MOSFET, 900M, 1700V, TO-247

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Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number C3M0900170M 1697-C3M0900170M-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.9000 ohms
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