Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
N-Channel 600V 60A (Tc) 1040W (Tc) Through Hole TO-247 [B]
MOSFET N-CH 600V 60A TO247
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | APT56M60B2 | APT56M60B2-ND | APT56M60B2 |
| Product Name | Power MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.1300 ohms |
