Wolfspeed Silicon Carbide MOSFETs C3M0120065L-TR

Description
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter Power Supplies Telecom Power Supplies Energy Storage Systems Solar (PV) inverters High Voltage DC/DC converters
  • Silicon Carbide MOSFETs - C3M0120065L-TR - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0120065L-TRDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0120065L-TRCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0120065L-TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120065L-TR - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter Power Supplies Telecom Power Supplies Energy Storage Systems Solar (PV) inverters High Voltage DC/DC converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0120065L-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120065L-TR
Silicon Carbide MOSFETs C3M0120065L-TR
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter Power Supplies Telecom Power Supplies Energy Storage Systems Solar (PV) inverters High Voltage DC/DC converters

Silicon Carbide Power MOSFET
C3MTMMOSFET Technology

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Datacenter Power Supplies
  • Telecom Power Supplies
  • Energy Storage Systems
  • Solar (PV) inverters
  • High Voltage DC/DC converters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0120065L-TRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120065L-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0120065L-TRDKR-ND
SIC, MOSFET, 120M, 650V, TOLL, I

SIC, MOSFET, 120M, 650V, TOLL, I

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120065L-TRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120065L-TRCT-ND
Single FETs, MOSFETs 1697-C3M0120065L-TRCT-ND
SIC, MOSFET, 120M, 650V, TOLL, I

SIC, MOSFET, 120M, 650V, TOLL, I

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120065L-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120065L-TR-ND
Single FETs, MOSFETs 1697-C3M0120065L-TR-ND
SIC, MOSFET, 120M, 650V, TOLL, I

SIC, MOSFET, 120M, 650V, TOLL, I

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120065L-TR - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0120065L-TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0120065L-TR
SIC, MOSFET, 120M, 650V, TOLL, I

SIC, MOSFET, 120M, 650V, TOLL, I

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number C3M0120065L-TR 1697-C3M0120065L-TRDKR-ND C3M0120065L-TR
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.1200 ohms
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