Wolfspeed Silicon Carbide MOSFETs C3M0021120K

Description
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch
  • Silicon Carbide MOSFETs - C3M0021120K - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - C3M0021120K - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1697-C3M0021120K-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325244-C3M0021120K - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0021120K - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed - 39AH5134 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0021120K - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0021120K
Silicon Carbide MOSFETs C3M0021120K
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Solar inverters
  • EV motor drive
  • High voltage DC/DC converters
  • Switched mode power supplies
  • Load switch
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0021120K - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0021120K
Single FETs, MOSFETs C3M0021120K
SICFET N-CH 1200V 100A TO247-4L

SICFET N-CH 1200V 100A TO247-4L

Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0021120K-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0021120K-ND
Single FETs, MOSFETs 1697-C3M0021120K-ND
N-Channel 1200V 100A (Tc) 469W (Tc) Through Hole TO-247-4L

N-Channel 1200V 100A (Tc) 469W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325244-C3M0021120K - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325244-C3M0021120K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325244-C3M0021120K
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325244-C3M0021120K Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Power Dissipation (Max): 469W (Tc) Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-247-4 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0021120K,-33 12-C3M0021120K Base Product Number: C3M0021120 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: ROHS3 Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325244-C3M0021120K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Power Dissipation (Max): 469W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0021120K,-3312-C3M0021120K
Base Product Number: C3M0021120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0021120K
MOSFET C3M0021120K
MOSFET 1.2kV 21mOHMS G3 SiC MOSFET

MOSFET 1.2kV 21mOHMS G3 SiC MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0021120K - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0021120K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0021120K
SICFET N-CH 1200V 100A TO247-4L

SICFET N-CH 1200V 100A TO247-4L

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed - 39AH5134 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed
39AH5134
Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed 39AH5134
MOSFET, N-CH, 1.2KV, 175DEG C, 469W ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 175DEG C, 469W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0021120K C3M0021120K 1697-C3M0021120K-ND 1325244-C3M0021120K C3M0021120K C3M0021120K 39AH5134
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed
rDS(on) 0.0210 ohms
Package Type TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4 TO-247; SOT3; TO-247-4 TO-247; TO-247-4 TO-3
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
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