The C3M0045065D is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 650 V and a continuous drain current rating of 49 A at 25¬8C. The device exhibits a low on-state resistance of 60 m,Ѷ at a gate-source voltage of 15 V and a drain current of 17.6 A, contributing to higher system efficiency and reduced cooling requirements. This MOSFET is suitable for various applications, including electric vehicle chargers, server and telecom power supply units, uninterruptible power supplies (UPS), solar inverters, switch-mode power supplies (SMPS), and DC/DC converters. It operates effectively within a temperature range of -40¬8C to +175¬8C and is compliant with RoHS standards, making it a reliable choice for engineers looking for robust semiconductor solutions. The device is packaged in a TO-247-3 case, facilitating through-hole mounting.
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325247-C3M0045065D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Power Dissipation (Max): 176W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 600 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 77
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0045065D,-33
Base Product Number: C3M0045065
Drive Voltage (Max Rds On, Min Rds On): 15V
Wolfspeed extends its leadership in 650V SiC technology by introducing new 45 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.
Features
Figures of Merit
Target Applications
N-Channel 650V 49A (Tc) 176W (Tc) Through Hole TO-247-3
GEN 3 650V 45 M SIC MOSFET
| Win Source Electronics | Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1325247-C3M0045065D | C3M0045065D | 1697-C3M0045065D-ND | C3M0045065D |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 176000 milliwatts | |||
| TJ | -40 to 175 C (-40 to 347 F) | |||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 |
