Wolfspeed Silicon Carbide MOSFETs C3M0045065J1-TR

Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter and Telecom Power Supplies EV Battery Chargers High voltage DC/DC converters Energy Storage Systems Solar Inverters
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter and Telecom Power Supplies EV Battery Chargers High voltage DC/DC converters Energy Storage Systems Solar Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0045065J1-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0045065J1-TR
Silicon Carbide MOSFETs C3M0045065J1-TR
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter and Telecom Power Supplies EV Battery Chargers High voltage DC/DC converters Energy Storage Systems Solar Inverters

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Datacenter and Telecom Power Supplies
  • EV Battery Chargers
  • High voltage DC/DC converters
  • Energy Storage Systems
  • Solar Inverters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0045065J1-TRDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0045065J1-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0045065J1-TRDKR-ND
SIC, MOSFET 45M, 650V TO-263-7XL

SIC, MOSFET 45M, 650V TO-263-7XL

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0045065J1-TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0045065J1-TR-ND
Single FETs, MOSFETs 1697-C3M0045065J1-TR-ND
SIC, MOSFET 45M, 650V TO-263-7XL

SIC, MOSFET 45M, 650V TO-263-7XL

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0045065J1-TRCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0045065J1-TRCT-ND
Single FETs, MOSFETs 1697-C3M0045065J1-TRCT-ND
SIC, MOSFET 45M, 650V TO-263-7XL

SIC, MOSFET 45M, 650V TO-263-7XL

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number C3M0045065J1-TR 1697-C3M0045065J1-TRDKR-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.0450 ohms
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