APT10035B2LLG is an N-channel enhancement mode power MOSFET in the Power MOS 7™ series, designed for high-voltage switching with low conduction and switching losses. It is packaged in a TO-264 case measuring 26.49 mm in length and 21.46 mm in width. The device has a drain-source breakdown voltage of 1000 V, a continuous drain current of 28 A at 25°C, and a maximum on-state resistance of 0.350 Ω at V_GS = 10 V. It supports a peak pulsed current of 112 A and a maximum power dissipation of 690 W. The junction-to-case thermal impedance is 0.18 °C/W, with an operating temperature range of -55°C to 150°C. Single-pulse avalanche energy is 3000 mJ, and total gate charge is 186 nC at 10 V gate-source voltage.
POWER MOS 7® MOSFET: Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and QG. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Richardson RFPD | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | APT10035B2LLG |
| Product Name | Power MOSFET Transistor |
| rDS(on) | 0.3500 ohms |
