Wolfspeed 650V MOSFET Transistor C3M0120065D

650V 120M SIC MOSFET Product overview: C3M0120065D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120065D can be used for catalog matching and distributor lookup.

Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M^TM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

Features

• 3rd Generation (C3M^TM) SiC MOSFET Technology
• Superior overall system level efficiency
• High frequency operation
• Robust body diode with low reverse recovery charge
• Kelvin Source connection to reduce parasitic inductance and switching losses
• Industry standard packages that meet creepage and clearance requirements

Figures of Merit

• Low on-state resistance over temperature
• Low parasitic capacitances
• Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
• Wide range of operation junction temperature

Target Applications

• Server Power Supplies
• EV Charging Systems
• Energy Storage Systems (UPS)
• Solar (PV) Inverters

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325251-C3M0120065D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Power Dissipation (Max): 98W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0120065D,-3312-C3M0120065D
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

N-Channel 650V 22A (Tc) 98W (Tc) Through Hole TO-247-3