Wolfspeed Silicon Carbide MOSFETs C3M0120065D

Description
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density. Features 3rd Generation (C3MTM) SiC MOSFET Technology Superior overall system level efficiency High frequency operation Robust body diode with low reverse recovery charge Kelvin Source connection to reduce parasitic inductance and switching losses Industry standard packages that meet creepage and clearance requirements Figures of Merit Low on-state resistance over temperature Low parasitic capacitances Robust and fast body diode with ultra-low reverse-recovery charge (Qrr) Wide range of operation junction temperature Target Applications Server Power Supplies EV Charging Systems Energy Storage Systems (UPS) Solar (PV) Inverters
  • Silicon Carbide MOSFETs - C3M0120065D - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325251-C3M0120065D - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 1697-C3M0120065D-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120065D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density. Features 3rd Generation (C3MTM) SiC MOSFET Technology Superior overall system level efficiency High frequency operation Robust body diode with low reverse recovery charge Kelvin Source connection to reduce parasitic inductance and switching losses Industry standard packages that meet creepage and clearance requirements Figures of Merit Low on-state resistance over temperature Low parasitic capacitances Robust and fast body diode with ultra-low reverse-recovery charge (Qrr) Wide range of operation junction temperature Target Applications Server Power Supplies EV Charging Systems Energy Storage Systems (UPS) Solar (PV) Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0120065D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120065D
Silicon Carbide MOSFETs C3M0120065D
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density. Features 3rd Generation (C3MTM) SiC MOSFET Technology Superior overall system level efficiency High frequency operation Robust body diode with low reverse recovery charge Kelvin Source connection to reduce parasitic inductance and switching losses Industry standard packages that meet creepage and clearance requirements Figures of Merit Low on-state resistance over temperature Low parasitic capacitances Robust and fast body diode with ultra-low reverse-recovery charge (Qrr) Wide range of operation junction temperature Target Applications Server Power Supplies EV Charging Systems Energy Storage Systems (UPS) Solar (PV) Inverters

Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

Features

  • 3rd Generation (C3MTM) SiC MOSFET Technology
  • Superior overall system level efficiency
  • High frequency operation
  • Robust body diode with low reverse recovery charge
  • Kelvin Source connection to reduce parasitic inductance and switching losses
  • Industry standard packages that meet creepage and clearance requirements

Figures of Merit

  • Low on-state resistance over temperature
  • Low parasitic capacitances
  • Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
  • Wide range of operation junction temperature

Target Applications

  • Server Power Supplies
  • EV Charging Systems
  • Energy Storage Systems (UPS)
  • Solar (PV) Inverters
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325251-C3M0120065D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325251-C3M0120065D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325251-C3M0120065D
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325251-C3M0120065D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Power Dissipation (Max): 98W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V Vgs (Max): +19V, -8V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: Not Applicable HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0120065D,-33 12-C3M0120065D Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325251-C3M0120065D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Power Dissipation (Max): 98W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0120065D,-3312-C3M0120065D
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120065D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120065D-ND
Single FETs, MOSFETs 1697-C3M0120065D-ND
N-Channel 650V 22A (Tc) 98W (Tc) Through Hole TO-247-3

N-Channel 650V 22A (Tc) 98W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120065D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0120065D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0120065D
650V 120M SIC MOSFET

650V 120M SIC MOSFET

Supplier's Site

Technical Specifications

  Richardson RFPD Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number C3M0120065D 1325251-C3M0120065D 1697-C3M0120065D-ND C3M0120065D
Product Name Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.1200 ohms
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
Polarity N-Channel N-Channel
PD 98000 milliwatts
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