N-Channel 650V 22A (Tc) 98W (Tc) Through Hole TO-247-3
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.
Features
Figures of Merit
Target Applications
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325251-C3M0120065D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Power Dissipation (Max): 98W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0120065D,-33
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant
650V 120M SIC MOSFET Product overview: C3M0120065D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120065D can be used for catalog matching and distributor lookup.
650V 120M SIC MOSFET
| DigiKey | Richardson RFPD | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1697-C3M0120065D-ND | C3M0120065D | 1325251-C3M0120065D | 278-C3M0120065D | C3M0120065D |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | ||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | Tube | TO-247; TO-247-3 |
| rDS(on) | 0.1200 ohms | ||||
| PD | 98000 milliwatts | 98 milliwatts |