N-Channel 600V 49A (Tc) Through Hole T-MAX™ [B2]
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
MOSFET N-CH 600V 49A T-MAX
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors |
| Product Number | APT6011B2VRG-ND | APT6011B2VRG | APT6011B2VRG |
| Product Name | Single FETs, MOSFETs | Power MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
