Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
N-Channel 600V 49A (Tc) Through Hole T-MAX™ [B2]
MOSFET N-CH 600V 49A T-MAX
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | APT6011B2VRG | APT6011B2VRG-ND | APT6011B2VRG |
| Product Name | Power MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.1100 ohms |
