Wolfspeed Silicon Carbide MOSFETs C3M0120100J-TR

Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies
  • Silicon Carbide MOSFETs - C3M0120100J-TR - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0120100J-TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0120100J-TRDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0120100J-TRCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0120100J-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120100J-TR
Silicon Carbide MOSFETs C3M0120100J-TR
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • C3MTM SiC MOSFET technology
  • Low parasitic inductance with separate driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Low output capacitance (60pF)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0120100J-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120100J-TR-ND
Single FETs, MOSFETs 1697-C3M0120100J-TR-ND
SIC, MOSFET, 120M, 1000V, TO-263

SIC, MOSFET, 120M, 1000V, TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120100J-TRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120100J-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0120100J-TRDKR-ND
SIC, MOSFET, 120M, 1000V, TO-263

SIC, MOSFET, 120M, 1000V, TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120100J-TRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120100J-TRCT-ND
Single FETs, MOSFETs 1697-C3M0120100J-TRCT-ND
SIC, MOSFET, 120M, 1000V, TO-263

SIC, MOSFET, 120M, 1000V, TO-263

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number C3M0120100J-TR 1697-C3M0120100J-TR-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.1200 ohms
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