Wolfspeed Single FETs, MOSFETs C3M0120100J-TR

Description
SIC, MOSFET, 120M, 1000V, TO-263
Request a Quote Datasheet
Description
SIC, MOSFET, 120M, 1000V, TO-263
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1697-C3M0120100J-TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120100J-TR-ND
Single FETs, MOSFETs 1697-C3M0120100J-TR-ND
SIC, MOSFET, 120M, 1000V, TO-263

SIC, MOSFET, 120M, 1000V, TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120100J-TRDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120100J-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0120100J-TRDKR-ND
SIC, MOSFET, 120M, 1000V, TO-263

SIC, MOSFET, 120M, 1000V, TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120100J-TRCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120100J-TRCT-ND
Single FETs, MOSFETs 1697-C3M0120100J-TRCT-ND
SIC, MOSFET, 120M, 1000V, TO-263

SIC, MOSFET, 120M, 1000V, TO-263

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0120100J-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120100J-TR
Silicon Carbide MOSFETs C3M0120100J-TR
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • C3MTM SiC MOSFET technology
  • Low parasitic inductance with separate driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Low output capacitance (60pF)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet

Technical Specifications

  DigiKey Richardson RFPD
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1697-C3M0120100J-TR-ND C3M0120100J-TR
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs
Polarity N-Channel
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