Wolfspeed FET, MOSFET Arrays CAB530M12BM3T

Description
SIC, MODULE, 530A, 1200V, 62MM,
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Description
SIC, MODULE, 530A, 1200V, 62MM,
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - 1697-CAB530M12BM3T-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB530M12BM3T-ND
FET, MOSFET Arrays 1697-CAB530M12BM3T-ND
SIC, MODULE, 530A, 1200V, 62MM,

SIC, MODULE, 530A, 1200V, 62MM,

Buy Now Datasheet
Silicon Carbide MOSFET Modules - CAB530M12BM3T - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB530M12BM3T
Silicon Carbide MOSFET Modules CAB530M12BM3T
Features Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate Low-Inductance Design for Fast Switching with Low Power Losses Benefits Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages Reduced Cooling Requirements & Reduced System Cost Optimized Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization Reduced Cooling Requirements & Reduced System Cost Evaluation Gate Driver and Clamped Inductive Load Evaluation Kit Available to Enable Easy Laboratory Testing & System Implementation Applications Railway and Traction EV Charging Infrastructure Industrial Automation & Testing High Frequency Power Supplies Renewable Energy Systems & Grid-Tied Inverters Active Front Ends & AC Inverters

Features

  • Industry-Leading, Reliable 3rd Generation Silicon Carbide MOSFET Technology in Robust, Well-Established 62mm Form Factor
  • Strong Thermal Performance + Robust CTE Matching with Aluminum Nitride Substrate + Copper Baseplate
  • Low-Inductance Design for Fast Switching with Low Power Losses

Benefits

  • Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages
  • Reduced Cooling Requirements & Reduced System Cost
  • Optimized Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization
  • Reduced Cooling Requirements & Reduced System Cost
  • Evaluation Gate Driver and Clamped Inductive Load Evaluation Kit Available to Enable Easy Laboratory Testing & System Implementation

Applications

  • Railway and Traction
  • EV Charging Infrastructure
  • Industrial Automation & Testing
  • High Frequency Power Supplies
  • Renewable Energy Systems & Grid-Tied Inverters
  • Active Front Ends & AC Inverters
Supplier's Site Datasheet

Technical Specifications

  DigiKey Richardson RFPD
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1697-CAB530M12BM3T-ND CAB530M12BM3T
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules
Package Type Module 62mm
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