Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT20M16LLLG APT20M16LLLG

Manufacturer: Microchip Technology
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1000068-APT20M16LLLG
Current Rating: 100 A
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 200 V
Number of Elements: 1
Input Capacitance: 7.22 nF
Power Dissipation: 694 W
Rise Time: 31 ns
Fall Time: 4 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-264
Alternative Parts (Cross-Reference): FDL100N50F; FQL40N50; FQL40N50F; FQL50N40;
Popularity: Low
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Schedule B: 8541290080
Voltage Rating (DC): 200 V
Turn-On Delay Time: 15 ns
Continuous Drain Current (ID): 100 A
Turn-Off Delay Time: 29 ns
Gate to Source Voltage (Vgs): 30 V

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.